Transparent amorphous memory cell: A bipolar resistive switching in ZnO/Pr0.7Ca0.3MnO3/ITO for invisible electronics application
Source abstract
Abstract
Abstract ZnO/Pr0.7Ca0.3MnO3 (ZnO/PCMO) amorphous thin films were grown on an indium-tin-oxide (ITO)/glass by pulsed laser deposition at room temperature. Interestingly, a stable bipolar resistive switching behavior of the ITO/ZnO/PCMO/ITO cell can be longer than 2.5 × 103 cycles. The on/off ratio of switching behaviors is as high as 104. The structure of ITO/ZnO/PCMO/ITO exhibits a high average transparency of 79.6% in the visible range with a maximum transparency of 84.6% at 590 nm wavelength. The conductive mechanism during switching cycling in our structure can be described by a trapped-control space charge limited current behavior. The ZnO/PCMO/ITO/glass structure shows a potential of the transparent memory for future invisible electronics devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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