Advantages of GeTeN material for phase change memory applications
Source abstract
Abstract
The nitrogen doped GeTe (GeTeN) thin film sputtered at a flow rate ratio (N-2/Ar) of 0.04, which proves to be outstanding in various properties comparing with GeTe, was investigated for the application of phase-change memory. The GeTeN film crystallizes i
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Liquid Crystal Research Advancements
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References (15)
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