journal article·2004-06Open access

Temperature dependence of the optical absorption coefficient of microcrystalline silicon

A. Poruba, J. Springer, L. Mullerova, A. Beitlerova, M. Vaněček, N. Wyrsch, A. Shah

Abstract

The optical absorption coefficient of amorphous and microcrystalline silicon was determined in a spectral range 400-3100 nm and a temperature range 77-350 K. Transmittance measurement and Fourier transform photocurrent spectroscopy were used. The measured data served as an input for our optical model of amorphous/microcrystalline tandem solar cell. Differences in the current generated in the amorphous and microcrystalline parts were computed, for an operating temperature between -20°C and +80°C. Optical spectra of microcrystalline silicon were compared to the spectrum of silicon on sapphire (without hydrogen and hydrogenated) and the observed difference was interpreted in terms of a different density of defects and higher disorder of microcrystalline Si. © 2004 Elsevier B.V. All rights reserved.
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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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