Characterizations of pulsed laser deposited SiC thin films

Abstract Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.