Photo-induced dissolution effect in Ag/As33S67 multilayer structures and its potential application

Abstract A new technique for preparing metal-doped layers using photo-induced metal dissolution in chalcogenide glasses is presented. This technique is based on multilayer structures formed by alternating metal (Ag) and chalcogenide (As 33 S 67 ) layers prepared by vacuum evaporation. Such multilayer structures have a greater sensitivity to illumination and a larger photo-dissolution rate in comparison to the conventional double layer structure Ag/As 33 S 67 . The multilayer structure was used to fabricate a phase grating for operation in the IR region.