journal article·2002-04

Linear thermal expansion coefficients of amorphous and microcrystalline silicon films

K. Takimoto, A. Fukuta, Y. Yamamoto, N. Yoshida, T. Itoh, S. Nonomura

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Abstract

Abstract The linear thermal expansion coefficient, β , of hydrogenated amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon films has been investigated. The value of β of a-Si:H and μc-Si:H films was ∼1×10 −6 K −1 at room temperature. It is also found that the β values for thermally annealed a-Si and polycrystalline Si were ∼4×10 −6 K −1 at room temperature, coefficients similar to that of single crystalline Si. The linear thermal expansion coefficients in Si films seem to be strongly influenced by the hydrogen incorporation.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

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References (3)

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3. Swenson · J. Phys. Chem. Ref. Data · 1983 · 12 · 17910.1063/1.555681 ↗