Thin films of Sb2S3 doped by Sm3+ ions

Abstract Pure and Sm 3+ doped amorphous thin films of Sb 2 S 3 were prepared by thermal co-evaporation of Sb 2 S 3 and Sm metal. The prepared films contained a slight over-stoichiometric excess of Sb. From transmittance measurement, the absorption edge, index of refraction, n , thickness, d , optical gap, E g opt , relative permittivity, e r , single oscillator energy, E o , dispersion energy, E d , and the values of third-order nonlinear susceptibility χ (3) were evaluated. The values of χ (3) increase with Sm doping. Some of above-mentioned values are slightly influenced by exposure of films to a UV lamp. The Raman spectra revealed two main structural units in the films: SbS 3 pyramids and Sb–Sb bonds in S 2 Sb–SbS 2 structural units. Three luminescence bands were found. The first one with maximum near 1130 nm can be assigned to 6 F 9/2 → 6 H 5/2 and/or 6 F 11/2 → 6 H 7/2 electron transitions, which are overlapping. The second band can be assigned to the electron transition 6 F 11/2 → 6 H 9/2 or 6 F 9/2 → 6 H 7/2 or 6 F 7/2 → 6 H 5/2 . The third luminescence band with maximum near 1500 nm can be probably assigned to the electron transition 6 F 11/2 → 6 H 11/2 .