journal article·2006-06Open access

UV and ozone influence on the conductivity of ZnO thin films

G. Gonçalves, A. Pimentel, E. Fortunato, R. Martins, E.L. Queiroz, R.F. Bianchi, R.M. Faria

Journal of Non-Crystalline Solids· Volume 352· Issue 9-20

Abstract

Abstract Complex impedance measurements were used to analyze the influence of ultraviolet and ozone gas on the electronic behaviour of ZnO films grown by rf magnetron sputtering. The data show that UV exposure strongly increases the ac conductivity of the film at very low frequencies, and that after ozone exposure it recovers the original value. At high frequencies, however, UV-light exposure it does not change the conductivity but the ozone acts in the sense to decrease it. Two distinct mechanisms, related to two relaxation time distributions are clearly observed: they are superimposed in the virgin sample, but they split forming two semicircles in the z ″( f ) − z ′( f ) diagrams when the samples are treated with UV and/or ozone gas. A combination of the bruggeman effective medium approximation (BEMA) with the random free energy barrier model is used to fit the data and to explain the ac conductivity variation phenomena observed.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (14)

Show source-provided references
1. Hutson · Phys. Rev. Lett. · 1960 · 4 · 50510.1103/PhysRevLett.4.505 ↗
2. Matsuoka · 1981 · vol. 1
3. Durán · Adv. Mater. · 2002 · 14 · 13710.1002/1521-4095(20020116)14:2<137::AID-ADMA137>3.0.CO;2-7 ↗
4. Ghosh · Indian J. PHYS. and Procced. The Iindian Assoc. for the Cult. Sci. Part A · 2003 · 77A · 637
5. Wuethrich · Sensor Actuat. A-Phys. · 1998 · 66 · 11410.1016/S0924-4247(97)01755-X ↗
6. Mahan · J. Appl. Phys. · 1979 · 50 · 279910.1063/1.326191 ↗
7. Bender · Jpn. J. Appl. Phys. · 2003 · 42 · L43510.1143/JJAP.42.L435 ↗
8. Jiang · Appl. Phys. Lett. · 2003 · 83 · 187510.1063/1.1605805 ↗
9. Fortunato · App. Phys. Lett. · 2004 · 85 · 254110.1063/1.1790587 ↗
10. Wang · Mater. Today · 2004 · 7 · 2610.1016/S1369-7021(04)00286-X ↗
11. Martins · J. Appl. Phys. · 2004 · 96 · 139810.1063/1.1765864 ↗
12. Aspnes · Thin Solid · 1982 · 89 · 24910.1016/0040-6090(82)90590-9 ↗
13. Dyre · J. Appl. Phys. · 1988 · 64 · 245610.1063/1.341681 ↗
14. Bianchi · J. Chem. Phys. · 1999 · 110 · 460210.1063/1.478341 ↗