Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation
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Abstract
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · ZnO doping and properties
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References (8)
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1. W. Futako, K. Yoshino, C.M. Fortmann, I. Shimizu, to be published.
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4. Cody · Solar Cells · 1980 · 2 · 22710.1016/0379-6787(80)90028-9 ↗
5. M. Wakagi, PhD Thesis, Tokyo Institute of Technology, The Graduate School, Yokohama 227, Japan, 1996.
6. N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials, 2nd edn., Oxford Univ. Press, London, 1979, p. 272.
7. Yoshino · Mater. Res. Soc. Symp. Proc. · 1996 · 420 · 33510.1557/PROC-420-335 ↗
8. C.M. Fortmann, Deposition conditions and the electronic properties of amorphous silicon alloys, in: G. Bruno, P. Capezzuto, A. Madan (Eds.), Plasma Deposition of Amorphous Silicon, Chap. 3, Academic Press, NY, 1995, p. 131.10.1016/B978-012137940-7/50004-8 ↗