Atomic layer deposition of ZrO2 thin films using a new alkoxide precursor

Abstract Zirconium oxide thin films were grown by atomic layer deposition using a new type of Zr alkoxide: [Zr(O t Bu) 2 (dmae) 2 ] 2 (dmae is dimethylaminoethoxide). Water was used as the oxygen source. The films grown at 190–240 °C were amorphous, and the films grown at 290–340 °C were nanocrystalline. The highest refractive index of the films was 2.08 at a wavelength of 580 nm. The permittivity of a film grown at 240 °C was 25.