Laser assisted electrochemical preparation of micro and nanopores in Ga x In1−x P
Source abstract
Abstract
We report on the preparation of Ga(x)In(1−x)P/GaAs lattice matched heterostructures by liquid phase epitaxy and their electrochemical etching to prepare porous networks. We show that the process of formation of pores strongly depends on the electrolyte, on the applied current/voltage anodization regime, and that illumination is a crucial factor in obtaining fine porous structures with a high degree of self-organization.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Anodic Oxide Films and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
Show source-provided references
1. Christophersen M, Carstensen J, Feuerhake A, Föll H (2000) Crystal orientation and electrolyte dependence for macropore nucleation and stable growth on p-type Si. Mater Sci Eng B 69–70:194–198. doi: 10.1016/s0921-5107(99)00262-710.1016/S0921-5107(99)00262-7 ↗
2. Ferreira NG, Soltz D, Decker F, Cescato L (1995) Evolution of surface textures on n-InP samples etched photoelectrochemically. J Electrochem Soc 142(4):1348–1352. doi: 10.1149/1.204417610.1149/1.2044176 ↗
3. Greger E, Riel P, Moser M, Kippenberg T, Kiesel P, Dohler GH (1997) Polarization threshold switches based on ordered GaInP. Appl Phys Lett 71(22):3245–3247. doi: 10.1063/1.12030410.1063/1.120304 ↗
4. Khaselev O, Turner JA (1998) A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting. Science 280(5362):425–42710.1126/science.280.5362.425 ↗
5. Kitatani T, Yazawa Y, Watahiki S, Tamura K, Minemura J, Warabisako T (1998) Optimal growth procedure of GaInP/GaAs heterostructure for high-efficiency solar cells. Sol Energy Mater Sol Cells 50(1–4):221–22710.1016/S0927-0248(97)00151-7 ↗
6. Kocha SS, Turner JA, Nozik AJ (1994) Study of the Schottky-Barrier and determination of the energetic positions of band edges at the N-type and P-type gallium indium–phosphide electrode-electrolyte interface. J Electroanal Chem 367(1–2):27–3010.1016/0022-0728(93)03020-P ↗
7. Kuznetsov VV, Lunin LS, Ratushnyi VI, Oliva EV, Shishkov MV (2004) Effect of the Crystallographic Orientation of GaAs Substrates on the Composition of GaxIn1—xP Layers. Inorganic Materials 40:327–330. doi: 10.1023/B:INMA.0000023948.90214.a710.1023/B:INMA.0000023948.90214.a7 ↗
8. Langa S, Carstensen J, Christophersen M, Foll H, Tiginyanu IM (2001) Observation of crossing pores in anodically etched n-GaAs. Appl Phys Lett 78(8):1074–1076. doi: 10.1063/1.135043310.1063/1.1350433 ↗
9. Madra SS (2004) Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP-Si/p-GaAs-C heterojunction bipolar transistor (HBT) devices. Microelectron Reliab 44(7):1061–1068. doi: 10.1016/j.microrel.2004.03.01210.1016/j.microrel.2004.03.012 ↗
10. Nakano K, Toda A, Yamamoto T, Ishibashi A (1992) Effects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition. Appl Phys Lett 61(16):1959–1961. doi: 10.1063/1.10837610.1063/1.108376 ↗
11. Ronnebeck S, Carstensen J, Ottow S, Foll H (1999) Crystal orientation dependence of macropore growth in n-type silicon. Electrochem Solid-State Lett 2(3):126–128. doi: 10.1149/1.139075610.1149/1.1390756 ↗
12. Santinacci L, Djenizian T (2008) Electrochemical pore formation onto semiconductor surfaces. Comptes Rendus Chimie 11(9):964–98310.1016/j.crci.2008.06.004 ↗
13. Schmuki P, Fraser J, Vitus CM, Graham MJ, Isaacs HS (1996) Initiation and formation of porous GaAs. J Electrochem Soc 143(10):3316–3322. doi: 10.1149/1.183720410.1149/1.1837204 ↗
14. Schmuki P, Erickson LE, Lockwood DJ, Fraser JW, Champion G, Labbe HJ (1998) Formation of visible light emitting porous GaAs micropatterns. Appl Phys Lett 72(9):1039–1041. doi: 10.1063/1.12095810.1063/1.120958 ↗
15. Stevens-Kalceff MA, Tiginyanu IM, Langa S, Foll H, Hartnagel HL (2001) Correlation between morphology and cathodoluminescence in porous GaP. J Appl Phys 89(5):2560–2565. doi: 10.1063/1.133792210.1063/1.1337922 ↗
16. Terai Y, Tokuno T, Ichida H, Kanematsu Y, Fujiwara Y (2009) Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature. Opt Mater 31(9):1323–1326. doi: 10.1016/j.optmat.2008.10.00710.1016/j.optmat.2008.10.007 ↗