Controlled growth of β-Na0.24V2O5 nanowire thin films
Source abstract
Abstract
A method to prepare well-aligned β-Na0.24V2O5 nanowires (NWs) involves the deposition of a vanadium oxide complex onto a substrate via gaseous transport, followed by a reaction between the complex and a sodium cation (Na+) precursor coated on the substrate. Techniques to investigate the composition, crystallinity, and morphology of products as prepared include ICP-AES, X-ray powder diffraction (PXRD), SEM/transmission electron microscope (TEM), and XPS. PXRD patterns and images from a TEM confirm the single-crystalline nature of β-Na0.24V2O5 NWs, which grow along direction [1 0 0]. Factors affecting the amount of deposited material and morphology were tested. On varying the reaction conditions, the length of the β-Na0.24V2O5 wires is controlled in a range of 5–25 μm. A mechanism of formation is proposed. According to measurements of field emission, the turn-on field is 7.8 V/μm, and the maximum emission current density of 4.66 mA/cm2 occurs at field 11 V/μm. This method is applicable to grow other tertiary metal oxide nanostructures on glass substrate. Aligned β-Na0.24V2O5 nanowire thin film was prepared via a novel procedure of thermal deposition. The length of the nanowires was controlled by adjusting the reaction temperature and the concentrations of reactants. Measurements of the field emission exhibited excellent properties with a linear Fowler–Nordheim behavior.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Electronic and Structural Properties of Oxides · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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