Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)
Source abstract
Abstract
We report the growth of Ge islands on Si (001) substrates with lithographically defined two-dimensionally periodic pits using focused ion-beam patterning and molecular beam epitaxy. The formation of circularly ordered Ge islands has been achieved by means of nonuniform strain field around the periphery of the holes due to ion bombardment. Lateral ordering of the Ge islands have been controlled by both the pit size and pit separation. Preferential growth at the pit sites has also been achieved by using appropriate pattern shape and size.
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Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Ion-surface interactions and analysis · Force Microscopy Techniques and Applications
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