InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic
Source abstract
Abstract
In this article, comprehensive combination of photomodulated optical spectroscopy (PR) and temperature-dependent photoluminescence (PL) is carried out to investigate the electronic energy levels and carrier dynamics in nanometers’ size InAs quantum dots (QDs) in different surrounding material. Depending on the temperature range, the integrated PL intensity as a function of temperature, correlated to a rate equation model reveals two thermal escape channels for the InAs QDs in a pure GaAs matrix and three thermal escape channels for InAs/InGaAs dots-in-a-well structure. The extraction of the electronic energy levels by room temperature PR allow analyzing the impact of the surrounding material composition on the thermal activation energies and resulting PL quenching process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
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