Silicon crystallization in nanodot arrays organized by block copolymer lithography
Source abstract
Abstract
Asymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymers are used to fabricate nanoporous PS templates with different pore diameter depending on the specific substrate neutralization protocol. The resulting polymeric templates are used as masks for the subsequent deposition of a thin (h = 5 nm) amorphous Si layer by electron beam evaporation. After removal of the polymeric film and of the silicon excess, well-defined hexagonally packed amorphous Si nanodots are formed on the substrate. Their average diameter (d < 20 nm), density (1.2 x 10(11) cm(-2)), and lateral distribution closely mimic the original nanoporous template. Upon capping with SiO2 and high temperature annealing (1050 degrees C, N-2), each amorphous Si nanodot rearranges in agglomerates of Si nanocrystals (d < 4 nm). The average diameter and shape of these Si nanocrystals strongly depend on the size of the initial Si nanodot.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Block Copolymer Self-Assembly · Anodic Oxide Films and Nanostructures · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
Show source-provided references
1. Andreozzi A, Lamagna L, Seguini G, Fanciulli M, Schamm-Chardon S, Castro C, Perego M (2011a) The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition. Nanotechnology 22:33530310.1088/0957-4484/22/33/335303 ↗
2. Andreozzi A, Poliani E, Seguini G, Perego M (2011b) The effect of random copolymer on the characteristic dimensions of cylinder-forming PS-b-PMMA thin films. Nanotechnology 22:18530410.1088/0957-4484/22/18/185304 ↗
3. Bates FS, Fredrickson GH (1999) Block copolymers-designer soft materials. Phys Today 52(2):32–3810.1063/1.882522 ↗
4. Castro C, Schamm-Chardon S, Pecassou B, Andreozzi A, Seguini G, Perego M, BenAssayag G (2013) In-plane organization of silicon nanocrystals embedded in SiO2 thin films. Nanotechnology 24:07530210.1088/0957-4484/24/7/075302 ↗
5. Cheng JY, Ross CA, Smith HI, Thomas EL (2006) Templated self-assembly of block copolymers: top-down helps bottom-up. Adv Mater 18:2505–252110.1002/adma.200502651 ↗
6. Farrell RA, Petkov N, Morris MA, Holmes JD (2010) Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: from molecules to devices. J Coll Int Sci 349:449–47210.1016/j.jcis.2010.04.041 ↗
7. Gay G, Baron T, Agraffeil C, Salhi B, Chevolleau T, Cunge G, Grampeix H, Tortai J-H, Martin F, Jalaguier E, De Salvo B (2010) CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns. Nanotechnology 21:43530110.1088/0957-4484/21/43/435301 ↗
8. Grom GF, Lockwood DJ, McCaffrey JP, Labbé HJ, Fauchet PM, White B Jr, Diener J, Kovalev D, Koch F, Tsybeskov L (2000) Ordering and self-organization in nanocrystalline silicon. Nature 407:358–36110.1038/35030062 ↗
9. Guarini KW, Black CT, Zhang Y, Babich IV, Sikorski EM, Gignac LM (2003) Low voltage, scalable nanocrystal flash memory fabricated by templated self assembly. In: Electron devices meeting, 2003. IEDM ‘03 technical digest. IEEE international, pp 22.2.1–22.2.410.1109/IEDM.2003.1269340 ↗
10. Hazelton AJ, Wakamoto S, Hirukawa S, McCallum M, Magome N, Ishikawa J, Lapeyre C, Guilmeau I, Barnola S, Gaugiran S (2009) Double-patterning requirements for optical lithography and prospects for optical extension without double patterning. J Micro/Nanolith MEMS MOEMS 8:01100310.1117/1.3023077 ↗
11. Hong AJ, Liu C-C, Wang Y, Kim J, Xiu F, Ji S, Zou J, Nealey PF, Wang KL (2010) Metal nanodot memory by self-assembled block copolymer lift-off. Nano Lett 10:224–22910.1021/nl903340a ↗
12. Hu H, Gopinadhan M, Osuji CO (2014) Directed self-assembly of block copolymers: a tutorial review of strategies for enabling nanotechnology with soft matter. Soft Matter 10:3867–388910.1039/c3sm52607k ↗
13. Jeong S-J, Xia G, Kim BH, Shin DO, Kwon S-H, Kang S-W, Kim SO (2008) Universal Block Copolymer Lithography for Metals, Semiconductors, Ceramics, and Polymers. Adv Mater 20:1898–190410.1002/adma.200702930 ↗
14. Jeong S-J, Kim JY, Kim BH, Moon H-S, Kim SO (2013) Directed self-assembly of block copolymers for next generation nanolithography. Mater Today 16:468–47610.1016/j.mattod.2013.11.002 ↗
15. Kang GB, Kim YT, Park JH, Kim S-I, Sohn Y-S (2009) Fabrication of silicon nanodots on insulator using block copolymer thin film. Curr Appl Phys 9:e197–e20010.1016/j.cap.2008.12.060 ↗
16. Koo K, Ahn H, Kim S-W, Ryu DY, Russell TP (2013) Directed self-assembly of block copolymers in the extreme: guiding microdomains from the small to the large. Soft Matter 9:9059–907110.1039/c3sm51083b ↗
17. Li W, Yang S (2007) Creation of sub-20-nm contact using diblock copolymer on a 300 mm wafer for complementary metal oxide semiconductor applications. J Vac Sci Technol, B 25:1982–198410.1116/1.2787732 ↗
18. Lupi FF, Giammaria TJ, Ceresoli M, Seguini G, Sparnacci K, Antonioli D, Gianotti V, Laus M, Perego M (2013) Rapid thermal processing of self-assembling block copolymer thin films. Nanotechnology 24:31560110.1088/0957-4484/24/31/315601 ↗
19. Lupi FF, Giammaria TJ, Seguini G, Laus M, Enrico E, De Leo N, Boarino L, Ober CK, Perego M (2014a) Thermally induced orientational flipping of cylindrical phase diblock copolymers. J Mater Chem C 2:2175–218210.1039/C3TC32283A ↗
20. Lupi FF, Giammaria TJ, Seguini G, Vita F, Francescangeli O, Sparnacci K, Antonioli D, Gianotti V, Laus M, Perego M (2014b) Fine tuning of lithographic masks through thin films of PS-b-PMMA with different molar mass by rapid thermal processing. Appl Mater Interfaces 6:7180–718810.1021/am5003074 ↗
21. Park S, Kim B, Wang JY, Russell TP (2008) Fabrication of highly ordered silicon oxide dots and stripes from block copolymer thin films. Adv Mater 20:681–68510.1002/adma.200701997 ↗
22. Perego M, Andreozzi A, Vellei A, Lupi FF, Seguini G (2013) Collective behavior of block copolymer thin films within periodic topographical structures. Nanotechnology 24:24530110.1088/0957-4484/24/24/245301 ↗
23. Ross CA, Berggren KK, Cheng JY, Jung YS, Chang J-B (2014) Three-dimensional nanofabrication by block copolymer self-assembly. Adv Mater 26:4386–439610.1002/adma.201400386 ↗
24. Ruiz R, Sandstrom RL, Black CT (2007a) Induced orientational order in symmetric diblock copolymer thin films. Adv Mater 19:587–59110.1002/adma.200600287 ↗
25. Ruiz R, Ruiz N, Zhang Y, Sandstrom RL, Black CT (2007b) Local defectivity control of 2D self-assembled block copolymer patterns. Adv Mater 19:2157–216210.1002/adma.200602470 ↗
26. Schamm S, Bonafos C, Coffin H, Cherkashin N, Carrada M, Assayag GB, Claverie A, Tencé M, Colliex C (2008) Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy 108:346–35710.1016/j.ultramic.2007.05.008 ↗
27. Segalman RA, Yokoyama H, Kramer EJ (2001) Graphoepitaxy of spherical domain block copolymer films. Adv Mater 13:1152–115510.1002/1521-4095(200108)13:15<1152::AID-ADMA1152>3.0.CO;2-5 ↗
28. Seguini G, Giammaria TJ, Lupi FF, Sparnacci K, Antonioli D, Gianotti V, Vita F, Placentino IF, Hilhorst J, Ferrero C, Francescangeli O, Laus M, Perego M (2014) Thermally induced self-assembly of cylindrical nanodomains in low molecular weight PS-b-PMMA thin films. Nanotechnology 25:04530110.1088/0957-4484/25/4/045301 ↗
29. The International Technology Roadmap for Semiconductors (ITRS) (2011) Emerging research materials. http://www.itrs.net/
30. Tsai H, Pitera JW, Miyazoe H, Bangsaruntip S, Engelmann SU, Liu C-C, Cheng JY, Bucchignano JJ, Klaus DP, Joseph EA, Sanders DP, Colburn ME, Guillorn MA (2014) Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication. ACS Nano 8:5227–523210.1021/nn501300b ↗
31. Tsybeskov L, Hirschman KD, Duttagupta SP, Zacharias M, Fauchet PM, McCaffrey JP, Lockwood DJ (1999) Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices. Appl Phys Lett 75:226510.1063/1.124985 ↗
32. Tsybeskov L, Kamenev BV, Sirenko AA, McCaffrey JP, Lockwood DJ (2010) Strain-induced lateral self-organization in Si/SiO2 nanostructures. Appl Phys Lett 96:01310510.1063/1.3290250 ↗
33. Xiao S, Yang XM, Edwards EW, La YH, Nealey PF (2005) Graphoepitaxy of cylinder-forming block copolymers for use as templates to pattern magnetic metal dot arrays. Nanotechnology 16:S32410.1088/0957-4484/16/7/003 ↗
34. Xu J, Hong SW, Gu W, Lee KY, Kuo DS, Xiao S, Russell TP (2011) Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch−2. Adv Mater 23:5755–576110.1002/adma.201102964 ↗
35. Zacharias M, Streitenberger P (2000) Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces. Phys Rev B 62:8391–839610.1103/PhysRevB.62.8391 ↗
36. Zacharias M, Blasing J, Veit P, Tsybeskov L, Hirschman K, Fauchet PM (1999) Thermal crystallization of amorphous Si/SiO2 superlattices. Appl Phys Lett 74:261410.1063/1.123914 ↗
37. Zucchi IA, Poliani E, Perego M (2010) Microdomain orientation dependence on thickness in thin films of cylinder-forming PS-b-PMMA. Nanotechnology 21:18530410.1088/0957-4484/21/18/185304 ↗