Photolithography enhancement by incorporating photoluminescent nanoscale cesium iodide molecular dots into the photoresists
Source abstract
Abstract
This work demonstrated an enhancement effect of photolithograph by the incorporation of photoluminescent nanoscale cesium iodide molecular dots into ultraviolet photoresists. Cesium iodide molecular dots with the size of about 0.4 nm acted as centers of ultraviolet absorption and luminescence which enabled the improvement of the morphology of the figure edges and photosensitivity of photoresist pattern. These photoluminescent molecular dots decreased the light interference while increasing the resist sensitization of the photoresist. The detailed mechanism about the enhancement effects of photoluminescent molecular dots incorporated into photoresists on the ultraviolet absorption, photosensitivity, and light interference has been proposed. This increased effect in the enhancement of photoresists makes way for their potential use for future nanoscale photolithography.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advancements in Photolithography Techniques · Nanofabrication and Lithography Techniques · Semiconductor materials and devices
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References (17)
Show source-provided references
1. Asenov A, Brown AR, Davies JH, Kaya S, Slavcheva G (2003) Simulation of intrinsic parameter fluctuations in deca-nanometer and nanometer-Scale MOSFETs. IEEE Trans Electron Devices 50(9):1837–185210.1109/TED.2003.815862 ↗
2. Baravelli E, Dixit A, Rooyackers R, Jurczak M, Speciale N, Meyer KD (2007) Impact of line-edge-roughness on FinFET matching performance. IEEE Trans Electron Devices 54(9):2466–247410.1109/TED.2007.902166 ↗
3. Dill FH (1975) Optical lithography. IEEE Trans Electron Devices 22(7):440–44410.1109/T-ED.1975.18158 ↗
4. Grabosch G, Parthier L, Kruell P, Knapp K (2004) Strong improvement of critical parameters of CaF2 lens blanks for 193 and 157 nm lithography. Proc SPIE 5377:1781–178610.1117/12.536310 ↗
5. Hwang MY, Kim H, Kim ES, Lee J, Koo SM (2011) Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask. Nanoscale Res Lett 6(1):573–58010.1186/1556-276X-6-573 ↗
6. Kim MC, Shamirya D, Jung Y, Boullart W, Kang CJ, Cho HK (2006a) Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching. J Vac Sci Technol B 24(6):2645–265210.1116/1.2366616 ↗
7. Kim SH, Hiroshima H, Komuro M (2006b) Photo-nanoimprint lithography combined with thermal treatment to improve resist pattern line-edge roughness. Nanotechnology 17(9):2219–222210.1088/0957-4484/17/9/024 ↗
8. Li YX, Liu F, Xiao L, Cui KY, Feng X, Zhang W, Huang YD (2013) Two-surface-plasmon-polariton-absorption based nanolithography. Appl Phys Lett 102(6):06311310.1063/1.4792591 ↗
9. Liu CJ, Bai XM, Li CP, She H, Pu CY, Liu TY (2010) Study on the electronic structures of CsI crystal with F-type color center. Acta Phys Sin 59(1):453–45710.7498/aps.59.453 ↗
10. Mahorowala A, Chen KJ, Sooriyakumaran R, Clancy A, Murthy D, Rasgon S (2005) Line edge roughness reduction by plasma curing photoresists. Proc SPIE 5753:380–38910.1117/12.600043 ↗
11. Pauliac-Vaujour S, Brianceau P, Comboroure C, Faynot O (2008) Improvement of high resolution lithography by using amorphous carbon hard mask. Microelectron Eng 85:800–80410.1016/j.mee.2008.02.007 ↗
12. Putrolaynen VV, Velichko AA, Pergament AL, Cheremisin AB, Grishin AM (2007) UV patterning of vanadium pentoxide films for device applications. J Phys D 40(17):5283–582610.1088/0022-3727/40/17/040 ↗
13. Schaller RR (1997) Moore’s law: past, present and future. IEEE Spectr 34(6):52–5910.1109/6.591665 ↗
14. Song Y (2010) Fabrication of multi-level 3-dimension microstructures by phase inversion process. Nano-Micro Lett 2(2):95–10010.5101/nml.v2i2.p95-100 ↗
15. Sturtevant JL, Chaara M, Elliot R, Hollifield LD, Soper RA, Stark DR, Thane NS, Petersen JS (1995) Antireflection coating process characterization and improvement for DUV lithography at 0.25 μm ground rules. Proc SPIE 2440:582–59310.1117/12.209288 ↗
16. Vaglio PA, Poliakov P, Gronheid R, Blomme P, Miranda CM, Dehaene W, Verkest D, Houdt JV, Bianchi D (2012) Linking EUV lithography line edge roughness and 16 nm NAND memory performance. Microelectron Eng 98:24–2810.1016/j.mee.2012.04.013 ↗
17. Yoshizawa M, Moriya S (2002) Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method. J Vac Sci Technol B 20(4):1342–134710.1116/1.1490392 ↗