Synthesis and morphology evolution of GaN/C nanocables
Source abstract
Abstract
GaN/C nanocables were synthesized via a thermochemical process. The GaN/C nanocables were composed of single crystalline GaN nanowire cores with a mean diameter of 80 nm and parallel carbon sheathes with a thickness of several nanometers. We find that GaN nanocables were partially evolved into waved GaN nanowires and discontinuously ordered nanodots within the carbon sheaths due to the decomposition of GaN at high temperature regions. Both the carbon sheathes and GaN nanowire cores show a high degree of crystalline perfection. This method may be applied to coat a wide range of nanostructures with carbon sheathes and prepare various hetrostructures, which may serve as potential building blocks in nanodevices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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