journal article·2018-10

Catalyst-free, tunable doping content of graphitic-N in arc-discharged graphene via gas and solid nitrogen sources and their formation mechanisms

Yanli Nan, Bo Li, Xiaojing Zhang, Xiaolong Song

Journal of Nanoparticle Research· Volume 20· Issue 10
Publisher page

Abstract

Facile, cost-effective, and catalyst-free synthesis of graphitic-nitrogen (graphitic-N) doping in arc-discharged graphene has been achieved via a gas (N2) nitrogen source. The N-doped graphene sheets are mainly of 2–5 layers. According to the growth mechanisms of the cathode-part (deposit) graphene during the arcing process, N2 exhibits a varying capability to form the graphitic-N doping. When N2 acts as the nitrogen source, the cathode-part deposit is mainly consist of graphitic-N graphene sheets. The content of the nitrogen atom is calculated to be ~ 2.88 at%. However, when melamine is used as a nitrogen source, the atomic percentage (AP) of graphitic-N doping is almost equal to the pyridinic- and pyrrolic-N doping in the cathode-part deposit. Based on the findings, a new growth mechanism of graphitic-N doping in arc graphene is rationally proposed. The electrochemical impedance spectroscopy (EIS) results suggest that the graphite-N doping on the graphene can decrease the electron transfer resistance (Rct) and have better electrical conductivity than the normal N-doped graphene (N-NDG).
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Research context

OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · Supercapacitor Materials and Fabrication

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