Insight into optical properties of strain-free quantum dot pairs
Source abstract
Abstract
Self-assembled GaAs/AlGaAs quantum dot pairs (QDPs) are grown by molecular beam epitaxy using high temperature droplet epitaxy technique. A typical QDP consists of dual-size quantum dots as observed based on atomic force microscopy image. The average height of quantum dot is 5.7 nm for the large quantum dots and 4.6 nm for the small ones. The average peak-to-peak distance of the two dots is about 75 nm. The optical properties of GaAs QDPs are studied by measuring excitation power-dependent and temperature-dependent photoluminescence. Unique photoluminescence properties have been observed from both excitation power-dependent and temperature-dependent measurements. Excitation power-dependent as well as temperature-dependent PL measurements have suggested lateral exciton transfer in the QDPs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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