Electron transport mechanisms in individual cobalt-doped ZnO nanorods
Source abstract
Abstract
This study examined carrier transport in single cobalt-doped zinc oxide (Co:ZnO) nanorods in temperatures ranging from 80 to 405 K. Measurements were taken on single nanorods deposited on a Si template, where two- and four-point metallic contacts were previously made using e-beam lithography, dielectrophoresis, and focused ion beam. In both two- and four-point probe measurements, the current–voltage curves were clearly linear and symmetrical with respect to both axes. The electrical measurements were carried out according to three different measuring methods to accurately determine the resistivity of the single Co:ZnO nanorods. The Co-doped nanorods exhibited ferromagnetic behavior at room temperature. The remanence permanent magnet of the nanorods increased with increasing Co concentration, however, this was accompanied by the decrease in electrical resistivity. The transport properties were dominated by the thermal activation of electrons from the Fermi level to the conduction band for a temperature above 140–160 K, and to the impurity band at a lower temperature. The electronic transport of the nanorods was influenced by the surface states when exposed in the air.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. Banerjee D, Jo SH, Ren ZF (2004) Enhanced field emission of ZnO nanowires. Adv Mater 16:2028–203210.1002/adma.200400629 ↗
2. Bao J, Shalish I, Su Z, Gurwitz R, Capasso F, Wang X, Ren Z (2011) Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires. Nanoscale Res Lett 6:40410.1186/1556-276X-6-404 ↗
3. Cha SN, Jang JE, Choi Y, Amaratunga GAJ, Ho GW, Welland ME, Hasko DG, Kang D-J, Kim JM (2006) High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes. Appl Phys Lett 89:26310210.1063/1.2416249 ↗
4. Chang P-C, Lu JG (2008) Temperature dependent conduction and UV induced metal-to-insulator transition in ZnO nanowires. Appl Phys Lett 92:21211310.1063/1.2937847 ↗
5. Chen W, Zhou CW, Mai LQ, Liu YL, Qi YY, Dai Y (2008) Field emission from V2O5·nH2O nanorod arrays. J Phys Chem C 112:2262–226510.1021/jp0766151 ↗
6. Cheng K, Chen F, Kai J (2006) V2O5 nanowires as a functional material for electrochromic device. Sol Energy Mater Sol Cells 90:1156–116510.1016/j.solmat.2005.07.006 ↗
7. Chiu S-P, Lin Y-H, Lin J-J (2009) Electrical conduction mechanisms in natively doped ZnO nanowires. Nanotechnology 20:01520310.1088/0957-4484/20/1/015203 ↗
8. Choi WB, Jin YW, Kim HY, Lee SJ, Yun MJ, Kang JH, Choi YS, Park NS, Lee NS, Kim JM (2001) Electrophoresis deposition of carbon nanotubes for triode-type field emission display. Appl Phys Lett 78:154710.1063/1.1349870 ↗
9. Coey JMD, Venkatesan M, Fitzgerald CB (2005) Donor impurity band exchange in dilute ferromagnetic oxides. Nat Mater 4:173–17910.1038/nmat1310 ↗
10. Cui JB, Gibson UJ (2005) Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays. Appl Phys Lett 87:13310810.1063/1.2058222 ↗
11. Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D (2000) Zener model description of ferromagnetism in Zinc-Blende magnetic semiconductors. Science 287:1019–102210.1126/science.287.5455.1019 ↗
12. Gu W, Choi H, Kim K (2006) Universal approach to accurate resistivity measurement for a single nanowire: theory and application. Appl Phys Lett 89:25310210.1063/1.2405400 ↗
13. Heo YW, Tein LC, Kwon Y, Norton DP, Pearton SJ, Kang BS, Ren F (2004a) Depletion-mode ZnO nanowire field-effect transistor. Appl Phys Lett 85:2274–227610.1063/1.1794351 ↗
14. Heo YW, Tien LC, Norton DP, Kang BS, Ren F, Gila BP, Pearton SJ (2004b) Electrical transport properties of single ZnO nanorods. Appl Phys Lett 85:2002–200410.1063/1.1792373 ↗
15. Hung CS, Gliessman JR (1954) Resistivity and Hall effect of germanium at low temperatures. Phys Rev 96:1226–123610.1103/PhysRev.96.1226 ↗
16. Kaminski A, Das Sarma S (2003) Magnetic and transport percolation in diluted magnetic semiconductors. Phys Rev B 68:23520110.1103/PhysRevB.68.235201 ↗
17. Kind H, Yan H, Messer B, Law M, Yang P (2002) Nanowire ultraviolet photodetectors and optical switches. Adv Mater 14:158–16010.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W ↗
18. Law M, Greene LE, Johnson JC, Saykally R, Yang P (2005) Nanowire dye-sensitized solar cells. Nat Mater 4:455–45910.1038/nmat1387 ↗
19. Leschkies KS, Divakar R, Basu J, Enache-Pommer E, Boercker JE, Carter CB, Kortshagen UR, Norris DJ, Aydil ES (2007) Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices. Nano Lett 7:1793–179810.1021/nl070430o ↗
20. Li QH, Wan Q, Liang YX, Wang TH (2004) Electronic transport through individual ZnO nanowires. Appl Phys Lett 84:4556–455810.1063/1.1759071 ↗
21. Liang W, Yuhas BD, Yang P (2009) Magnetotransport in Co-doped ZnO nanowires. Nano Lett 9:892–89610.1021/nl8038184 ↗
22. Liao Z-M, Liu K-J, Zhang J-M, Xu J, Yu D-P (2007) Effect of surface states on electron transport in individual ZnO nanowires. Phys Lett A 367:207–21010.1016/j.physleta.2007.03.006 ↗
23. Ma Y-J, Zhang Z, Zhou F, Lu L, Jin A, Gu C (2005) Hopping conduction in single ZnO nanowires. Nanotechnology 16:746–74910.1088/0957-4484/16/6/020 ↗
24. MacManus-Driscoll JL, Khare N, Liu Y, Vickers ME (2007) Structural evidence for Zn interstitials in ferromagnetic Zn1−xCoxO films. Adv Mater 19:2925–292910.1002/adma.200602215 ↗
25. Mott NF, Davis EA (1979) Electronic processes in non-crystalline materials. Clarendon Press, Oxford
26. Nishimura H (1965) Impurity conduction in the intermediate concentration region. Phys Rev 138:A815–A82110.1103/PhysRev.138.A815 ↗
27. Park WI, Kim JS, Yi GC, Lee H-J (2005) ZnO nanorod logic circuits. Adv Mater 17:1393–139710.1002/adma.200401732 ↗
28. Pearton SJ, Norton DP, Heo YW, Tien LC, Ivill MP, Li Y, Kang BS, Ren F, Kelly J, Hebard AF (2006) ZnO spintronics and nanowire devices. J Electron Mater 35:862–86810.1007/BF02692541 ↗
29. Sato K, Katayama-Yoshida H (2000) Material design for transparent ferromagnets with ZnO-based magnetic semiconductors. Jpn J Appl Phys 2 2(39):L555–L55810.1143/JJAP.39.L555 ↗
30. Sato K, Katayama-Yoshida H (2001) Stabilization of ferromagnetic states by electron doping in Fe-, Co- or Ni-doped ZnO. Jpn J Appl Phys 2 40:L334–L33610.1143/JJAP.40.L334 ↗
31. Schlenker E, Bakin A, Weimann T, Hinze P, Weber DH, Gölzhäuser A, Wehmann H-H, Waag A (2008) On the difficulties in characterizing ZnO nanowires. Nanotechnology 19:36570710.1088/0957-4484/19/36/365707 ↗
32. Sharma P, Gupta A, Rao KV, Owens FJ, Sharma R, Ahuja R, Osorio Guillen JM, Johansson B, Gehring GA (2003) Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO. Nat Mater 2:673–67710.1038/nmat984 ↗
33. Shklovskii BI, Efros AL (1984) Electronic properties of doped semiconductors. Springer, New York10.1007/978-3-662-02403-4 ↗
34. Suehiro J, Zhou GB, Hara M (2003) Fabrication of a carbon nanotube-based gas sensor using dielectrophoresis and its application for ammonia detection by impedance spectroscopy. J Phys D 36:L109–L11410.1088/0022-3727/36/21/L01 ↗
35. Wang Q, Sun Q, Chen G, Kawazoe Y, Jena P (2008) Vacancy-induced magnetism in ZnO thin films and nanowires. Phys Rev B 77:20541110.1103/PhysRevB.77.205411 ↗
36. Yamamoto K, Akita S, Nakayama Y (1996) Orientation of carbon nanotubes using electrophoresis. Jpn J Appl Phys 2 35:L917–L91810.1143/JJAP.35.L917 ↗
37. Yamamoto K, Akita S, Nakayama Y (1998) Orientation and purification of carbon nanotubes using AC electrophoresis. J Phys D 31:L34–L3610.1088/0022-3727/31/8/002 ↗
38. Yoon SW, Seo JH, Kim K-H, Ahn J-P, Seong TY, Lee KB, Kwon H (2009) Electrical properties and microstructural characterization of single ZnO nanowire sensor manufactured by FIB. Thin Solid Films 517:4003–400610.1016/j.tsf.2009.01.168 ↗
39. Yuan GD, Zhang WJ, Jie JS, Fan X, Zapien JA, Leung YH, Luo LB, Wang PF, Lee CS, Lee ST (2008) p-Type ZnO nanowire arrays. Nano Lett 8:2591–259710.1021/nl073022t ↗