Fabrication and characterization of GaP/polymer nanocomposites for advanced light emissive device structures
Source abstract
Abstract
GaP nanoparticles have been prepared using white P and a mild aqueous synthesis at decreased temperature followed by ultrasonication and stored as the suspension in water–ethanol mixture. They were characterized by standard methods of X-ray diffraction, transmission electron microscopy, Raman light scattering, and photoluminescence. Properties of GaP nanoparticles were compared with industrial and specially grown perfect GaP single crystals. It was shown that the GaP nanoparticles in suspension are the most suitable for high quality GaP/polymers nanocomposites because only they are uniform with dimensions of about 10 nm which is optimal for appearance of the pronounced quantum confinement effect. Polyglycidyl methacrylate (PGMA), polyglycidyl methacrylate-co-polyoligoethyleneglycol methacrylate (PGMA-co-POEGMA), and biphenyl vinyl ether (BPVE) polymers were used to prepare GaP polymer nanocomposites. The thickness of the polymer nanocomposite film was about 250–300 nm defined from AFM scratch experiment. The resulting nanocomposites yielded a bright luminescence at room temperature in a broad band with the maximum ranging from 2.5 to 3.2 eV and showed pronounced quantum confinement effects and other interesting and important for application phenomena leading to dramatic 1 eV expansion of GaP luminescence to the UV spectral region.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
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1. Pyshkin SL (1967) Preparation and properties of gallium phosphide. Ph.D. Thesis, State University of Moldova, Kishinev
2. Pyshkin SL, Ballato J (2011) Chapter “long-term convergence of bulk- and nano-crystal properties” in the open access book “Optoelectronics”. ISBN: 978-953-307-276-0, InTech, Vienne (in press)
3. Pyshkin S, Ballato J (2010) Evolution of optical and mechanical properties of semiconductors over 40 years. J Electron Mater 39(6): 635–641. doi: 10.1007/s11664-010-1170-z10.1007/s11664-010-1170-z ↗
4. Pyshkin S, Ballato J, Mura A, Marceddu M (2010a) Luminescence of the GaP:N long-term ordered single crystals. In: Supplemental proceedings of the 2010 TMS annual meetings, , vol 3, pp 47–54, Seattle, Feb 2010
5. Pyshkin SL, Ballato J, Chumanov G, DiMaio J, Saha A (2006) Preparation and characterization of nanocrystalline GaP. In: Symposium “nanoelectronics and photonics”, 2006 NSTI nanotech conference, technical proceedings of the conference, vol 3, pp 94–197, Boston, 7–11 May 2006
6. Pyshkin SL, Ballato J, Chumanov G (2007a) Raman light scattering from long-term ordered GaP single crystals. J Opt A Pure Appl Opt 9:33–3610.1088/1464-4258/9/1/006 ↗
7. Pyshkin S, Ballato J, Bass M, Turri G (2007b) Luminescence of long-term ordered pure, doped gallium phosphide (invited). Symposium “recent developments in semiconductor, electro optic, radio frequency materials”, TMS 2007 annual meeting, exhibition, Orlando, Feb–Mar. J Electron Mater 37(4):388–39510.1007/s11664-007-0375-2 ↗
8. Pyshkin SL, Zhitaru R, Ballato J (2008a) Modification of crystal lattice by impurity ordering in GaP. International symposium on defects, transport and related phenomena, Detroit, Proceedings of International Conference on Material Science and Technology, MS & T, pp 303–310, Cobo Centre, 16–20 Sept 2007
9. Pyshkin SL, Ballato J, Bass M, Chumanov G, Turri G (2008b) Time-dependent evolution of crystal lattice, defects, impurities in CdIn2S4, GaP. The 16th international conference on ternary, multinary compounds (ICTMC16), Berlin, Sept 15–19. Phys Status Solidi C 6(5):1112–111510.1002/pssc.200881177 ↗
10. Pyshkin S, Ballato J, Bass M, Turri G (2008c) Luminescence of long-term ordered pure and doped gallium phosphide (invited). Symposium “recent developments in semiconductor, electro optic and radio frequency materials”, TMS 2007 Annual Meeting & Exhibition, Orlando, Feb–Mar 2007. J Electron Mater 37(4): 388–39510.1007/s11664-007-0375-2 ↗
11. Pyshkin S, Ballato J, Bass M, Chumanov G, Turri G (2009a) Properties of the long-term ordered semiconductors. The 2009 TMS annual meeting and exhibition, San Francisco, Feb 15–19. Suppl Proc 3:477–484
12. Pyshkin S, Ballato J, Bass M, Turri G (invited) (2009b) Evolution of luminescence from doped gallium phosphide over 40 years. TMS 2008 annual meeting, symposium: advances in semiconductor, electro optic and radio frequency materials, March 9–13, New Orleans, LA. J Electron Mater 38(5): 640–64610.1007/s11664-009-0678-6 ↗
13. Pyshkin SL, Zhitaru R, Ballato J, Chumanov G, Bass M (2009c) Structural Characterization of Long Term Ordered Semiconductors. In: Proceedings of the 2009 MS&T conference. International symposium “Fundamentals & Characterization”, session “Recent Advances in Structural Characterization of Materials”, pp 698–709, Pittsburgh, 24–29 Oct 2009
14. Pyshkin SL, Ballato J, Chumanov G, Tsyntsaru N, Rusu E (2010b) Preparation and characterization of nanocrystalline gap for advanced light emissive device structures. In: The 2010 nanotech conference, NSTI-nanotech 2010, vol 1, pp 522–525, Anaheim, 21–24 June 2010. ISBN 978-1-4398-3401-5. http://www.nsti.org
15. Pyshkin SL, Ballato J, Belevschii S, Rusu E, Racu A, Van DerVeer D (2011) Synthesis and characterization of GaP nanoparticles for light emissive devices. In: The 2011 nanotech conference, NSTI-Nanotech 2011, vol 1, pp 327–330, Boston, 13–16 June 2011. ISBN 978-1-4398-7142-3. http://www.nsti.org
16. Zallen R, Paul W (1964) Band structure of some semiconductors. Phys Rev 134:A162810.1103/PhysRev.134.A1628 ↗