journal article·2004-02

Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

N. Herlin-Boime, J. Vicens, C. Dufour, F. Ténégal, C. Reynaud, R. Rizk

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Abstract

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO2 laser pyrolysis from a C2H2 and SiH4 mixture. The laser radiation is strongly absorbed by SiH4 vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C2H2 dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.
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Research context

OpenAlex topics: Laser-Ablation Synthesis of Nanoparticles · Silicon Nanostructures and Photoluminescence · Laser-induced spectroscopy and plasma

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (27)

Show source-provided references
1. Borsella E., L. Caneve, R. Fantoni, S. Piccirillo, N. Basili & S. Enzo, 1989. Investigation of the mechanism of CO2 laser driven production of ultrafine sinterable (Si3N4 and SiC) powders. Appl. Surf. Sci. 36, 213.10.1016/0169-4332(89)90916-1 ↗
2. Boucle J., A. Kassiba, J. Emery, I.V. Kityk, M. Makowska-Janusik, J. Sanetra, N. Herlin-Boime & M. Mayne, 2002. Local electrooptic effect of the SiC large-sized nanocrystallites incorporated in polymer matrix. Phys. Lett. A 302(4), 196.10.1016/S0375-9601(02)00965-9 ↗
3. Cannon W.R., S.C. Danforth, J.S. Haggerty & R.A. Marra, 1986. Sinterable ceramic powders from laser-driven reactions: Pro-cess description and modelling. J. Amer. Ceram. Soc. 65, 330.10.1111/j.1151-2916.1982.tb10465.x ↗
4. Cauchetier M., O. Croix & M. Luce, 1988. Laser synthesis of silicon carbide powders from silane and hydrocarbon mixtures. Adv. Ceram. Mater. 3, 548-552.10.1111/j.1551-2916.1988.tb00276.x ↗
5. Demichelis F., C.F. Pirri & E. Tresso, 1992. Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide. J. Appl. Phys. 72(4), 1327-1333.10.1063/1.351742 ↗
6. Fantoni R., E. Borsella, S. Piccirillo & E.S. Ceccato, 1990. Laser synthesis and crystallographic characterization of ultrafine SiC powders. J. Mater. Res. 5(1), 143-150.10.1557/JMR.1990.0143 ↗
7. Fantoni R., F. Bijnen, N. Djuric & S. Picirillo, 1991. Resonance CARS detection of SiC2 as reaction intermediate in IR Laser synthesis of SiC from SiH4/hydrocarbon mixtures. Appl. Phys. B 52(3), 176.10.1007/BF00750948 ↗
8. Flint J.H. & Haggerty J.S., 1988. Models for synthesis of ceramic powders by vapor phase reactions. Ceram. Trans. 1, 244.
9. Gheorghiu A., C. Senemaud, H. Roulet, G. Dufour, T. Moreno, S. Bodeur, C. Reynaud, M. Cauchetier & M. Luce, 1992. Atomic configurations and local order in laser-synthesized Si, Si-N, Si-C, and Si-C-N nanometric powders, as studied by X-ray-induced photoelectron spectroscopy and extended X-ray-absorption fine-structure analysis. J. Appl. Phys. 71(9), 4118.10.1063/1.350841 ↗
10. Huisken F., B. Kohn, R. Alexandrescu, S. Cojocaru, A. Crunteanu, G. Ledoux & C. Reynaud, 1999. Silicon Carbide nanoparticles produced by CO2 laser pyrolysis of SiH4/C2H2 gas mixtures in a flow reactor. J. Nanoparticle Res. 1, 293-303.10.1023/A:1010081206959 ↗
11. Huisken F., G. Ledoux, O. Guillois & C. Reynaud, 2002. Light-emitting silicon nanocrystals from laser pyrolysis.Adv. Mat. 14, 1861.10.1002/adma.200290021 ↗
12. Kerdiles S., R. Rizk, A. P´erez, Rodriguez, B. Garrido, O. Gonzalez-Varona, L. Calvo-Barrio & J.R. Morante, 1998. Magnetron sputtering synthesis of silicon-carbon films: Structural and optical characterization. Solid-State Electron. 42(12), 2315-2320.10.1016/S0038-1101(98)00232-9 ↗
13. Kerdiles S., A. Hairie, R. Rizk & C. Guedj, 2001. xCx alloys. Phys. Rev. B 63(20), 205206/1-4.
14. Kerdiles S. & R. Rizk, 2002. Lowtemperature nanocrystallization of silicon carbide by hydrogen reactive magnetron sputtering. Phil. Mag. A 82, 601-614.10.1080/01418610208239620 ↗
15. Klug H. & L. Alexander, 1974. X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials. Wiley, New York.
16. Ledoux G., O. Guillois, D. Porterat, C. Reynaud, F. Huisken, B. Kohn & V. Paillard, 2000. Photoluminescence properties of silicon nanocrystals as a function of their size. Phys. Rev. B 62(23), 15942.10.1103/PhysRevB.62.15942 ↗
17. Lee B.T., D.K. Kim, C.K. Moon & J.K. Kim, 1999. Microstructural investigation of lowtemperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors. J. Mater. Res. 14, 24-28.10.1557/JMR.1999.0006 ↗
18. Lihrmann J.M. & M. Cauchetier, 1994. Amodel for the formation of nanosized SiC powders by laser Induced gas phase reaction. J. Eur. Ceram. Soc. 13(1), 41.10.1016/0955-2219(94)90056-6 ↗
19. Melchior H. 1972. Demodulation and photodetection techniques. In: Arecchi F.T. and Schultz-Dubois E.O. eds. Handbook, Vol 1. North-Holland, Amsterdam, pp. 725, 992.
20. Rietveld H.M. 1969, A profile refinement method for nuclear and magnetic structures. J. Appl. Cryst. 2(2), 65-7110.1107/S0021889869006558 ↗
21. Sawano K., J.S. Haggerty & H.K. Bowen, 1987. Formation of SiC powder from laser heated vapor phase reactions. Yogyo-Kyokai-Shi. 95(1), 64.
22. Spitzer G., D.A. Kleiman & D. Walsh, 1959. Phys. Rev. 113, 127.10.1103/PhysRev.113.127 ↗
23. Takeshita T., Y. Kurata & S. Hasegawa, 1992. Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by X-ray diffraction and X-ray photoelectron spectroscopy. J. Appl. Phys. 71(11), 5395-5400.10.1063/1.350561 ↗
24. Tardieu de Malleissye J., F. Lempereur & C. Marsal, 1972. Pyro-lyse de l'ac´ etyl' ene sous l'action d'un laser ' a gaz carbonique. C.R. Acad. Sci. C. 275, 1153-1155.
25. Tougne P., H. Hommel, A.P. Legrand, N. Herlin, M. Luce & M. Cauchetier, 1993. Evolution of the structure of ultrafine SiC laser formed powders with synthesis conditions. Diamond Relat. Mater. 2, 486.10.1016/0925-9635(93)90105-B ↗
26. Vassen R. & D. St¨over, 1999. Processing and properties of nanograin silicon carbide. J. Am. Ceram. Soc. 32, 3623-3637.
27. Veprek S., Z. Iqbal, R.O. K¨uhne, P. Capezzato, F.A. Sarrott & J.K. Gimzekski, 1983. Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorption. J. Phys. C. 16(32), 6241-6262.10.1088/0022-3719/16/32/015 ↗