Influence of temperature, metal layer, and groove angle in the nanowire growth: a prospective study on nickel silicide nanowires
Source abstract
Abstract
This work demonstrates the important factors to optimize the growth of nickel silicide (NiSi) nanowires (NWs). The samples were prepared at different deposition temperatures and characterized. Spontaneous reaction of metal and Si has been investigated for silicide formations. Metal diffusion is a crucial factor to form silicide phases and layer morphologies. The initial NiSi layer deposited under specific conditions induced fast NiSi NW growth rather than initial cobalt (Co) silicide layer. Ni is a faster diffuser rather than Si to produce NWs on Ni monosilicide template. The initial stage significantly affects silicide-formed grain sizes (180–368 nm). Thermal stability of the NWs was studied via post-annealing process. Systematic demonstration has been performed by modulation of heating processes. We report that compressive stress is a driving force for the growth of NWs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Nanowire Synthesis and Applications · Chalcogenide Semiconductor Thin Films
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References (32)
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