Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates
Source abstract
Abstract
We have investigated the temperature dependence of photoluminescence (PL) peak position of InAs self-assembled quantum dots (QDs) grown on GaAs(11N)A (N = 3, 5) substrates. The interband transition energy is calculated by the resolution of the 3D Schrodinger equation for a parallelepipedic InAs QD, with a width of about 8 nm and a height around 3 nm. Experimentally, it was found that the PL spectra quenches at about 160 K. In addition, the full width at half maximum (FWHM) has an abnormal evolution with varying temperature. The latter effect maybe due to the carrier repopulation between QDs. The disorientation of the GaAs substrate and the low width of terraces which was presented in the high index surfaces have an important contribution in the PL spectra. Despite the non-realist chosen shape of QD and the simplest adopted model, theoretical and experimental results revealed a clear agreement.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Abdi ben Nasrallah S, Bouazra A, Poncet A, Said M (2010) Theoretical investigation of intersubband transition energies and oscillator strength in CdS/SiO2 quantum dots. Physica E 43:146–15010.1016/j.physe.2010.06.034 ↗
2. Baira M, Bouzaiene L, Sfaxi L, Maaref H, Marly O, Bru-Chevallier C (2009) Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots. J Appl Phys 105:094322–09432510.1063/1.3122003 ↗
3. Boichuk VI, Bilynsky IV, Shakleina IO, Kogoutiouk I (2010) Dielectric mismatch in finite barrier cubic quantum dots. Physica E 43:161–16610.1016/j.physe.2010.06.031 ↗
4. Bouazra A, Abdi-Ben Nasrallah S, Poncet A, Said M (2010) Numerical simulation of a coupling effect on electronic states in quantum dots. Superlattices Microstruct 48:1–810.1016/j.spmi.2010.04.018 ↗
5. Bouzaïene L, Saidi F, Sfaxi L, Maaref H (2010) Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (115)A substrate. Physica B 405:744–74710.1016/j.physb.2009.09.098 ↗
6. Bouzaïene L, Sfaxi L, Baira M, Maaref H, Bru-Chevallier C (2011) Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots. J Nanopart Res 13:257–26210.1007/s11051-010-0024-1 ↗
7. Califano M, Harrison P (1999) Approximate methods for the solution of quantum wires and dots: connection rules between pyramidal, cuboidal, and cubic dots. J Appl Phys 86:5054–505910.1063/1.371478 ↗
8. Caridi EA, Stark JB (1992) Strain tensor elements for misfit‐strained [hhk]‐oriented cubic crystals. Appl Phys Lett 60:1441–144310.1063/1.107264 ↗
9. Caroff P, Paranhoen C, Platz C, Folliot H, Bertru N, Labbe C, Piron R, Homeyer E, Le Corre A, Loualiche S (2005) High-gain and low-threshold InAs quantum-dot lasers on InP. Appl Phys Lett 87:243107–24310910.1063/1.2146063 ↗
10. El-Moghraby D, Johnson RG, Harrison P (2003) The effect of inter-dot separation on the finite difference solution of vertically aligned coupled quantum dots. Comput Phys Commun 155:236–24310.1016/S0010-4655(03)00367-9 ↗
11. Godefroo S, Maes J, Hayne M, Mmoshchalkov VV, Henini M, Pulizzi F, Patane A, Eaves L (2004) Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots. J Appl Phys 96:2535–253910.1063/1.1767972 ↗
12. Gong Z, Niu ZC, Fang ZD (2006) Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires. Nanotechnology 17:1140–114510.1088/0957-4484/17/4/049 ↗
13. Grundmann M, Stier O, Bimberg D (1995) Excited states in self‐organized InAs/GaAs quantum dots: theory and experiment. Phys Rev B 52:11969–1197110.1103/PhysRevB.52.11969 ↗
14. Henini M, Bugajski M (2005) Advances in self-assembled semiconductor quantum dot lasers. Microelectron J 36:950–95610.1016/j.mejo.2005.04.017 ↗
15. Hwang TM, Lin WW, Wang WC, Wang W (2004) Numerical simulation of three dimensional pyramid quantum dot. J Comput Phys 196:208–23210.1016/j.jcp.2003.10.026 ↗
16. Lee HS, Lee JY, Kim TW, Lee DU, Choo DC, Jung M, Kim MD (2002) Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped Al x Ga1−x As/GaAs heterostructures. J Appl Phys 91:5195–519910.1063/1.1459752 ↗
17. Liang BL, Wang ZM, Sablon KA, Mazur YI, Salamo GJ (2007) Influence of GaAs substrate orientation on InAs quantum dots: surface morphology, critical thickness, and optical properties. Nanoscale Res Lett 2:609–61310.1007/s11671-007-9103-3 ↗
18. Lüerben D, Bleher R, Kalt H (2000) High-precision determination of the temperature-dependent band-gap shrinkage due to the electron–phonon interaction in GaAs. Phys Rev B 61:15812–1581610.1103/PhysRevB.61.15812 ↗
19. Mazin JY, Gérard JM, Izraël A, Barrier D, Bastard G (1994) Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs. Phys Rev Lett 73:716–71910.1103/PhysRevLett.73.716 ↗
20. Mlinar V, Peeters FM (2006) Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots. Appl Phys Lett 89:261910–26191210.1063/1.2424435 ↗
21. Sanguinetti S, Gurioli M, Grilli E, Guzzi M, Henini M (2000) Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates. Appl Phys Lett 77:1982–198410.1063/1.1311814 ↗
22. Schmidbauer M, Seydmohamadi Sh, Grigoriev D, Wang ZM, Mazur YI, Schäfer P, Hanke M, Köhler R, Salamo GJ (2006) Controlling planar and vertical ordering in three-dimensional (In, Ga)As quantum dot lattices by GaAs surface orientation. Phys Rev Lett 96:66108–6611110.1103/PhysRevLett.96.066108 ↗
23. Sheng W, Leburton JP (2002) Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules. Appl Phys Lett 81:4449–445110.1063/1.1526167 ↗
24. Smirnov MB, Talalaev VG, Novikov BV, Sarangov SV, Zakharov ND, Werner P, Gösele U, Tomm JW, Cirlin GE (2010) Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing. Phys Status Solidi B 247:347–35210.1002/pssb.200945457 ↗
25. Stier O, Grundmann M, Bimberg D (1999) Electronic and optical properties of strained quantum dots modeled by 8-band k.p theory. Phy Rev B 59:5688–570110.1103/PhysRevB.59.5688 ↗
26. Stoleru VG, Pal D, Towe E (2002) Self-assembled (In, Ga)As/GaAs quantum-dot nanostructures: strain distribution and electronic structure. Physica E 15:131–15210.1016/S1386-9477(02)00459-9 ↗
27. Temko Y, Suzuki T, Jacobi K (2003) Shape and growth of InAs quantum dots on GaAs(113)A. Appl Phys Lett 82:2142–214410.1063/1.1563738 ↗
28. Vaccaro PO, Tominaga K, Hosoda M, Fujita K, Watanabe T (1995) Quantum-confined stark shift due to piezoelectric effect in InGaAs/GaAs quantum wells grown on (111)A GaAs. Jpn J Appl Phys 34:1362–136610.1143/JJAP.34.1362 ↗
29. Varshni YP (1967) Temperature dependence of the energy gap in semiconductors. Physica 34:149–15410.1016/0031-8914(67)90062-6 ↗
30. Wang LW, Williamson AJ, Zunger A, Jiang H, Singh J (2000) Comparison of the k.p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots. Appl Phys Lett 76:339–34110.1063/1.125747 ↗
31. Wei Z, Yu Z-Y, Liu Y-M (2010) Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions. Chin Phys B 19:067302–06730610.1088/1674-1056/19/6/067302 ↗
32. Yang CS (2008) Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method. Microelectron J 39:1469–147110.1016/j.mejo.2008.04.006 ↗