On the spectral difference between electroluminescence and photoluminescence of Si nanocrystals: a mechanism study of electroluminescence
Source abstract
Abstract
Spectral shift, especially blueshift, in peak position of electroluminescence (EL) spectrum of Si nanocrystal (Si-nc) with respect to its photoluminescence (PL) counterpart has been often observed. Explanations for the spectral difference are different for different EL mechanisms adopted. To gain a relevant picture of the EL process, in this work, we analyze three EL mechanisms that are mainly applied nowadays, i.e., the model of defect light emission, that of band-filling, and that of Si-nc size selection by the carrier energy. Different Si-nc samples and working conditions are designed and their EL and PL emissions monitored according to the predictions of the three models. It is concluded that the observed EL is mainly of Si-nc-related origin. The experimental results are more consistent with the model of Si-nc size selection.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
Show source-provided references
1. Anopchenko A, Marconi A, Moser E, Prezioso S, Wang M, Pavesi L, Pucker G, Bellutti P (2009) Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers. J Appl Phys 106:03310410.1063/1.3194315 ↗
2. Canham LT (2000) Gaining light from silicon. Nature 408:411–41210.1038/35044156 ↗
3. Chen D, Xie ZQ, Wu Q, Zhao YY, Lu M (2007) Electroluminescence of Si-nanocrystal doped SiO2. Chin Phys Lett 24:2390–239310.1088/0256-307X/24/8/064 ↗
4. Creazzo T, Redding B, Marchena E, Murakowski J, Prather DW (2010) Tunable photoluminescence and electroluminescence of size-controlled silicon nanocrystals in nanocrystalline-Si/SiO2 superlattices. J Lumin 130:631–63610.1016/j.jlumin.2009.11.007 ↗
5. Fang YC, Li WQ, Qi LJ, Li LY, Zhao YY, Zhang ZJ, Lu M (2004) Photoluminescence from SiO x thin films: effects of film thickness and annealing temperature. Nanotechnology 15:494–50010.1088/0957-4484/15/5/016 ↗
6. Fauchet PM, Ruan J, Chen H, Pavesi L, Negro LD, Cazzaneli M, Elliman RG, Smith N, Samoc M, Luther-Davies B (2005) Optical gain in different silicon nanocrystal systems. Opt Mater 27:745–74910.1016/j.optmat.2004.08.008 ↗
7. Franzò G, Irrera A, Moreira EC, Miritello M, Iacona F, Sanfilippo D, Di Stefano G, Fallica PG, Priolo F (2002) Electroluminescence of silicon nanocrystals in MOS structures. Appl Phys A74:1–510.1007/s003390101019 ↗
8. Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev OI, van Tendeloo G, Moshchalkov VV (2008) Classification and control of the origin of photoluminescence from Si nanocrystals. Nat Nanotechnol 3:174–17810.1038/nnano.2008.7 ↗
9. Gösele U (2008) Shedding new light on silicon. Nat Nanotechnol 3:134–13510.1038/nnano.2008.40 ↗
10. Jambois O, Rinnert H, Devaux X, Vergnat M (2005) Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films. J Appl Phys 98:04610510.1063/1.2034087 ↗
11. Li D, Chen YB, Lu M (2012a) An effect of laser pre-annealing on the enhancement of light emission of Si nanocrystal thin film. Mater Lett 89:9–1110.1016/j.matlet.2012.08.037 ↗
12. Li D, Chen YB, Ren Y, Zhu J, Zhao YY, Lu M (2012b) A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals. Nanoscale Res Lett 7:20010.1186/1556-276X-7-200 ↗
13. Lin GR, Lin CJ, Lin CK, Chou LJ, Chueh YL (2005) Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2. J Appl Phys 97:09430610.1063/1.1886274 ↗
14. Lin GR, Lin CJ, Lin CT (2007) Low-plasma and high-temperature PECVD grown silicon-rich SiO x film with enhanced carrier tunneling and light emission. Nanotechnology 18:39520210.1088/0957-4484/18/39/395202 ↗
15. Lockwood DJ (2009) Light emission in Si nanostructures. J Mater Sci 20:235–244
16. Pavesi L, Negro LD, Mazzoleni C, Franzo G, Priolo F (2000) Optical gain in silicon nanocrystals. Nature 408:440–44410.1038/35044012 ↗
17. Prasad PN (2004) Nanophotonics. Wiley & Sons, New Jersey10.1002/0471670251 ↗
18. Qin GG, Li AP, Zhang BR, Li BC (1995) Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure. J Appl Phys 78:2006–200910.1063/1.360175 ↗
19. Sato K, Hirakuri K (2006) Three primary color luminescence from natively and thermally oxidized nanocrystalline silicon. J Vac Sci Technol B 24:604–60710.1116/1.2172253 ↗
20. Torrea JDL, Souifi A, Poncet A, Busseret C, Lemiti M, Bremond G, Guillot G, Go nzalez O, Garrido B, Morante JR, Bonafos C (2003) Optical properties of silicon nanocrystal LEDs. Physica E 16:326–33010.1016/S1386-9477(02)00612-4 ↗
21. Wang M, Anopchenko A, Marconi A, Moser E, Prezioso S, Pavesi L, Pucher G, Bellutti P, Vanzetti L (2009) Light emitting devices based on nanocrystalline-silicon multilayer structure. Physica E 41:912–91510.1016/j.physe.2008.08.009 ↗
22. Xie ZQ, Dan C, Li ZH, Zhao YY, Lu M (2007) A combined approach to greatly enhancing the photoluminescence of Si nanocrystals embedded in SiO2. Nanotechnology 18:11571610.1088/0957-4484/18/11/115716 ↗
23. Zhu J, Wu X, Zhang M, Wang Y, Ning XJ, Zhao YY, Lu M (2011) Photoluminescence responses of Si nanocrystal to differing pumping conditions. J Appl Phys 110:013502-1–013502-410.1063/1.3601350 ↗
24. Zhu J, Hao HC, Li D, Lu M (2012) Matrix effect on the photoluminescence of Si nanocrystal. J Nanopart Res 14:1097-1–1097-710.1007/s11051-012-1097-9 ↗
25. Židek K, Trojánek F, Malý P, Pelant L, Dohnalová K (2010) Femtosecond luminescence spectroscopy of core states in silicon nanocrystals. Opt Express 18:252412524910.1364/OE.18.025241 ↗