Effects of electron tunneling in photophysics of quantum-sized luminescent nanosilicon

The paper deals with the processes of photoburning and dark recovery of the photoluminescence (PL) yield of a “core-shell”-type hybrid nanoparticles Si/SiO x (npSi/SiO x ) after exposure to laser light with a wavelength of 405 nm and power density of 0.05–1 W/cm2. The PL of npSi/SiO x occurs after excitation of nanocrystalline Si core and subsequent energy transfer to the luminescent oxygen-deficient centers (ODC) in the SiO x shell of a nanoparticle. These photoburning effects linearly depend on the power density of the exciting laser light, and the dynamics of the photoburning of PL is significantly non-exponential: the burning rate strongly drops during the exposure. The stop of laser exposure of npSi/SiO x is accompanied by a slow dark recovery of the quantum efficiency of PL up to its initial level. We have demonstrated the possibility of controlling the photosensibility of npSi/SiO x through changing the electron affinity of the environment. We have also proposed a physical mechanism that explains the observed photoburning and subsequent dark recovery of npSi/SiO x PL based on the existence of “traps” for electrons residing in the SiO x shell, where the electrons come as a result of tunneling from the excited ODC. The limiting time for this process is the lifetime of PL of ODC ranging from 10−5 to 10−4 s. The drop of the burning rate during exposure is caused by a strong difference in tunneling probabilities for different pairs of “ODC-trap”. The dark back tunneling of an electron from a trap to the original ODC occurs significantly (7–10 orders of magnitude) slower than the direct tunneling due to higher energy barrier.