journal article·2015-03

Studying of the photoluminescence characteristics of AgInS2 quantum dots

Fan Yang, Yinghui Wang, Jiechao Gao, Ning Sui, Qinghui Liu, Yue Wang, Liwei Liu, Lu Zou, Zhihui Kang, Hanzhuang Zhang

Journal of Nanoparticle Research· Volume 17· Issue 3
Publisher page

Abstract

The optical properties of AgInS2 quantum dots (QDs), with the average size being 5 nm, are studied in detail. The photoluminescence (PL) of AgInS2 QDs in solution and aggregation state exhibits an unusual temperature-dependent peak shift behaviour. Therefore, the relaxation process of excited QDs is detected using transient absorption technique, which shows that two kinds of emission states (involving the exciton state and trapping state) participate in the PL process of QDs. The emission of trapping state is expected to play an important role in the temperature-dependent evolution of PL peak.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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