Silicon Nanoelectronics and Beyond
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Abstract
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
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References (9)
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1. Chau R., S. Datta, M. Doczy, J. Kavalieros & M. Metz, 2003. Gate Dielectric Scaling for High-performance CMOS: From SiO2 to High-K, International Workshop on Gate Insulator 2003, Tokyo, Japan.10.1109/IWGI.2003.159198 ↗
2. Dennard R.H. et al., 1974. Design of ion-implanted MOSFETs with very small physical dimensions. IEEE J. Solid-State Circuits SC-9(5).10.1109/JSSC.1974.1050511 ↗
3. Lucovsky G., 2001. Electronic Structure of High-k Transition-metal and Rare-earth Gate Dielectrics for Aggressively-scaled Silicon Devices, International Workshop on Gate Insulator, 3.3, Tokyo.
4. Lilienfeld J.E., 1930. US Patent #1,745,175, Method and Apparatus for Controlling Electric Currents, January 28.
5. Lilienfeld J.E., 1932. US Patent #1,877,140, Amplifier for Electric Currents, September 13.
6. Lilienfeld J.E., 1933. US Patent #1,900,018 Device for Controlling Electric Current, March 7.
7. Shockley W., 1956. The forty-sixth kelvin lecture 'transistor physics.' Proc. IEEE 103(Pt.B, 7).10.1049/pi-b-1.1956.0116 ↗
8. Shockley W., 1984. The path to the conception of the junction transistor. IEEE Trans. Electron Dev. ED-31(11).10.1109/T-ED.1984.21749 ↗
9. Zhirnov V.V., R.K. Cavin, III, J.A. Hutchby & G.I. Bourianoff, 2003. Limits to binary logic switch scaling – a Gedanken model. Proc. IEEE 91(11).10.1109/JPROC.2003.818324 ↗