From Si nanowire to SiC nanotube
Source abstract
Abstract
Si nanowires (NWs), with diameters of about 800 nm and lengths of about 10 μm, previously synthesized by the VLS method with gold catalyst, were carburized at 1,100 °C under methane for conversion into SiC nanostructures. These experiments have shown that Si NWs have been transformed into SiC nanotubes (NTs) with approximately the same sizes. Nanotubes’ sidewall thickness varies from 20 to 150 nm depending on the NTs’ height. These SiC nanotubes are hexagonal in shape and polycrystalline. A model of growth based on the out-diffusion of Si through the SiC layer was proposed to explain the transformation from Si nanowires to SiC nanotubes. This model was completed with thermodynamic calculations on the Si–H2–CH4–O2 system and with results from complementary experiment using propane precursor. Routes for obtaining crystalline SiC NTs using this reaction are proposed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Advanced ceramic materials synthesis · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Camilla Coletti (2007) Silicon carbide biocompatibility, surface control and electronic cellular interaction for biosensing applications. Thesis, University of South Florida. Accessed 9 October 2007
2. Cimalla V et al (2007) Nanoelectromechanical devices for sensing applications. Sens Actuators B 136:24–34. doi: 10.1016/j.snb.2006.10.04910.1016/j.snb.2006.10.049 ↗
3. Dai HJ, Wong EW, Lu YZ, Fan SS, Lieber CM (1995) Synthesis and characterization of carbide nanorods. Nature 375:769–772, ISSN: 0028–083610.1038/375769a0 ↗
4. Dhalluin F, Desre PJ, Den Hertog M, Rouviere J-L, Ferret P, Gentile P, Baron T (2007) Critical condition for growth of silicon nanowires. Appl Phys Lett 102:094906-1. doi: 10.1063/1.2811935
5. Ferro G, Monteil Y, Vincent H, Thevenot Min Duc Tran V, Cauwet F, Bouix J (1996) Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization. J Appl Phys 80 (8):4691–4702. ISSN: 0021–897910.1063/1.363453 ↗
6. Ferro G, Monteil Y, Vincent H, Cauwet F, Bouix J, Durupt P, Olivier J, Bisaro R (1996) Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition. Thin Solid Films 278:22–27, ISSN:0040–609010.1016/0040-6090(95)08034-1 ↗
7. Ferro G, Camassel J, Juillaguet S, Balloud C, Polychroniadis EK, Stoemenos Y, Dazord J, Peyre H, Monteil Y, Rushworth SA, Smith LM (2003) Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C-SiC on Si. Semicond Sci Technol 18(12):1015–1023, ISSN: 0268–124210.1088/0268-1242/18/12/303 ↗
8. Harima Hiroshi (2006) Raman scattering characterization on SiC. Microelectron Eng 83:126–12910.1016/j.mee.2005.10.037 ↗
9. Hu JQ, Lu QK, Tang KB et al (2000) Synthesis and characterization of SiC nanowires through a reduction-carburization route. J Phys Chem B 104(22):5251-5254, ISSN: 1089–5647
10. Latu-Romain L, Mouchet C, Cayron C, Rouviere E, Simonato J-P (2008) Growth parameters and shape specific synthesis of silicon nanowires by the VLS method. J Nanopart Res 10:1287–1291. doi: 10.1007/s11051-007-9350-310.1007/s11051-007-9350-3 ↗
11. Li JP and Steckl AJ (1995) Nucleation and void formation mechanisms in SiC thin film growth on Si by carbonization. J Electrochem Soc 142(2):634-641, ISSN: 0013–4651
12. Patil A et al (2009) Silicon carbide differential amplifiers for high-temperature sensing. Mater Sci Forum 600–603:1083–1086, ISSN: 0255–5476
13. Rogdakis K, Lee SY, Bescond M, Lee SK, Bano E, Zekentes K (2008) 3C-silicon carbide nanowire FET: an experimental and theoretical approach. IEEE Trans 55(8):1970–1976. doi: 10.1109/TED.2008.92666710.1109/TED.2008.926667 ↗
14. Rümmeli Mark H et al (2009) Hydrogen activated axial inter-conversion in SiC nanowires. J Solid State Chem 182:602–607. doi: 10.1016/j.jssc.2008.12.00410.1016/j.jssc.2008.12.004 ↗
15. SENSiC AB company (2011) http://www.sensic.se
16. Senthil K, Yong K (2008) Enhanced field emission from density-controlled SiC nanowires. Mater Chem Phys 112:88–93. doi: 10.1016/j.matchemphys.2008.05.02410.1016/j.matchemphys.2008.05.024 ↗
17. Seong HK, Choi HJ, Lee SK, Lee JI, Choi DJ (2004) Optical and electrical transport properties in silicon carbide nanowires. Appl Phys Lett 85(7):1256–1258. doi: 10.1063/1.178174910.1063/1.1781749 ↗
18. Soueidan M, Ferro G, Nsouli B, Cauwet F, Dazord J, Younes G, Monteil Y (2006) Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition. Mater Sci Eng B 130(1–3):66–72. doi: 10.1016/j.mseb.2006.02.05210.1016/j.mseb.2006.02.052 ↗
19. Sundarajan S, Bhushan B (1998) Micro/nanotribological studies of polysilicon and SiC films for MEMS applications. Wear 217:251–26110.1016/S0043-1648(98)00169-0 ↗
20. Wang D-H, Xu D, Wang Q, Hao Y-J, Jin G-Q, Guo X-Y, Tu KN (2008) Periodically twinned SiC nanowires. Nanotechnology 19 215602, 1–7. doi: 10.1088/0957-4484/19/21/21560210.1088/0957-4484/19/21/215602 ↗
21. Wu R, Yang G, Gao M, Li B, Chen J, Zhai R, Pan Y (2009) Growth of SiC nanowires from NiSi solution. Crys Growth Des 9(1):100–104. doi: 10.1021/cg701101j10.1021/cg701101j ↗
22. Yang Y, Meng G, Liu X et al (2008) Aligned SiC porous nanowire arrays with excellent field emission properties converted from si nanowires on silicon wafer. J Phys Chem C 112(51):20126–20130. doi: 10.1021/jp809359v10.1021/jp809359v ↗
23. Zhou XT, Wang N, Lai HL et al (1999) Beta-SiC nanorods synthesized by hot filament chemical vapor deposition. App Phys Lett 74(26):3942–394410.1063/1.124231 ↗