Ge quantum dot lattices in Al2O3 multilayers
Source abstract
Abstract
In this article, we show how to produce materials consisting of regularly ordered Ge quantum dot lattices in an amorphous alumina matrix with a controllable Ge quantum dot size, shape, spacing, crystalline structure, and degree of regularity in their ordering. The production of such materials is achievable already at room temperature by magnetron sputtering deposition of a (Ge + Al2O3)/Al2O3 multilayer. The materials show photoluminescence in the visible and ultraviolet light range, a size-dependent blue shift of the photoluminescence peak and an enhancement of its intensity by size reduction, indicating the quantum dot origin of the photoluminescence. The materials also exhibit excellent mechanical properties due to the alumina matrix. Their internal structure is shown to be highly resistive to irradiation with energetic particles for a large range of the irradiation parameters.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Quantum Dots Synthesis And Properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (55)
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