Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate
Source abstract
Abstract
We present a polymer-complexing soft template technique to construct the ZnO-nanowire/polymer light emitting device prototype that exhibits blue electrically driven emission with a relatively low-threshold voltage at room temperature in ambient atmosphere, and the ZnO-nanowire-based LED’s emission wavelength is easily tuned by controlling the applied-excitation voltage. The nearly vertically aligned ZnO-nanowires with polymer film were used as emissive layers in the devices. The method uses polymer as binder in the LED device and dispersion medium in the luminescence layer, which stabilizes the quasi-arrays of ZnO nanowires embedding in a thin polymer film on silicon substrate and passivates the surface of ZnO nanocrystals, to prevent the quenching of luminescence. Additionally, the measurements of electrical properties showed that ZnO-nanowire/polymer film could significantly improve the conductivity of the film, which could be attributed to an increase in both Hall mobility and carrier concentration. The results indicated that the novel technique is a low-cost process for ZnO-based UV or blue light emission and reduces the requirement for achieving robust p-doping of ZnO film. It suggests that such ZnO-nanowire/polymer-based LEDs will be suitable for the electro-optical application.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Advanced Sensor and Energy Harvesting Materials · Organic Light-Emitting Diodes Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. Bao JM, Zimmler MA, Capasso F, Wang X, Ren ZF (2006) Broadband ZnO single-nanowire light-emitting diode. Nano Lett 6(8):1719–1722. doi: 10.1021/nl061080t10.1021/nl061080t ↗
2. Braun D, Heeger AJ (1992) Electroluminescence from light-emitting diodes fabricated from conducting polymers. Thin Solid Films 216(1):96–98. doi: 10.1016/0040-6090(92)90876-D10.1016/0040-6090(92)90876-D ↗
3. Burroughes JH, Bradley DDC, Brown AR, Marks RN, Mackay K, Friend RH, Holmes AB (1990) Light-emitting diodes based on conjugated polymers. Nature 347(6293):539–541. doi: 10.1038/347539a010.1038/347539a0 ↗
4. Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC (2006) Electroluminescence from ZnO nanowire/polymer composite p-n junction. Appl Phys Lett 88 (17): 17350310.1063/1.2198480 ↗
5. Dai ZR, Pan ZW, Wang ZL (2003) Novel nanostructures of functional oxides synthesized by thermal evaporation. Adv Funct Mater 13(1):9–24. doi: 10.1002/adfm.20039001310.1002/adfm.200390013 ↗
6. Dev A, Panda SK, Kar S, Chakrabarti S, Chaudhuri S (2006) Surfactant-assisted route to synthesize well-aligned ZnO nanorod arrays on sol-gel-derived ZnO thin films. J Phys Chem B 110(29):14266–14272. doi: 10.1021/jp062729l10.1021/jp062729l ↗
7. Duan XF, Huang Y, Agarwal R, Lieber CM (2003) Single-nanowire electrically driven lasers. Nature 421(6920):241–245. doi: 10.1038/nature0135310.1038/nature01353 ↗
8. Govender K, Boyle DS, O’Brien P, Binks D, West D, Coleman D (2002) Room-temperature lasing observed from ZnO nanocolumns grown by aqueous solution deposition. Adv Mater 14(17):1221–1224. doi: 10.1002/1521-4095(20020903)14:17<1221::AID-ADMA1221>3.0.CO;2-110.1002/1521-4095(20020903)14:17<1221::AID-ADMA1221>3.0.CO;2-1 ↗
9. Guo XL, Choi JH, Tabata H, Kawai T (2001) Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode. Jpn J Appl Phys Part 2 40 (3A): 177–18010.1143/JJAP.40.L177 ↗
10. Ham H, Shen GZ, Cho JH, Lee TJ, Seo SH, Lee CJ (2005) Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties. Chem Phys Lett 404(1–3):69–73. doi: 10.1016/j.cplett.2005.01.08410.1016/j.cplett.2005.01.084 ↗
11. He Y, Sang WB, Wang JA, Wu R, Min J (2005a) Polymer-assisted complexing controlled orientation growth of ZnO nanorods. J Nanopart Res 7(2–3):307–311. doi: 10.1007/s11051-005-1169-110.1007/s11051-005-1169-1 ↗
12. He Y, Sang WB, Wang JA, Wu R, Min J (2005b) Vertically well-aligned ZnO nanowires generated with self-assembling polymers. Mater Chem Phys 94(1):29–33. doi: 10.1016/j.matchemphys.2005.03.06310.1016/j.matchemphys.2005.03.063 ↗
13. Hsu NE, Hung WK, Chen YF (2004) Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods. J Appl Phys 96(8):4671–4673. doi: 10.1063/1.178790510.1063/1.1787905 ↗
14. Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang PD (2001) Room-temperature ultraviolet nanowire nanolasers. Science 292(5523):1897–1899. doi: 10.1126/science.106036710.1126/science.1060367 ↗
15. Kar S, Pal BN, Chaudhuri S, Chakravorty D (2006) One-dimensional ZnO nanostructure arrays: Synthesis and characterization. J Phys Chem B 110(10):4605–4611. doi: 10.1021/jp056673r10.1021/jp056673r ↗
16. Kim H, Cepler A, Osofsky MS, Auyeung RCY, Piqué A (2007) Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition. Appl Phys Lett 90 (20): 203508–1–310.1063/1.2739363 ↗
17. Klingshirn C (2007) ZnO: Material, physics and applications. ChemPhysChem 8(6):782–803. doi: 10.1002/cphc.20070000210.1002/cphc.200700002 ↗
18. Könenkamp R, Word RC, Schlegel C (2004) Vertical nanowire light-emitting diode. Appl Phys Lett 85(24):6004–6006. doi: 10.1063/1.183687310.1063/1.1836873 ↗
19. Lim JH, Kang CK, Kim KK, Park IK, Hwang DK, Park SJ (2006) UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering. Adv Mater 18(20):2720–2724. doi: 10.1002/adma.20050263310.1002/adma.200502633 ↗
20. Lyu SC, Zhang Y, Ruh H, Lee HJ, Shim HW, Suh EK, Lee CJ (2002) Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires. Chem Phys Lett 363(1–2):134–138. doi: 10.1016/S0009-2614(02)01145-4
21. Ohta H, Mizoguchi H, Hirano M, Narushima S, Kamiya T, Hosono H (2003) Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO. Appl Phys Lett 82(5):823–825. doi: 10.1063/1.154443610.1063/1.1544436 ↗
22. Park WI, Yi GC, Kim M, Pennycook SJ (2003) Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures. Adv Mater 15(6):526–529. doi: 10.1002/adma.20039012210.1002/adma.200390122 ↗
23. Ryu YR, Lee TS, Leem JH, White HW (2003) Fabrication of homostructural ZnO p-n junctions and ohmic contacts to arsenic-doped p-type ZnO. Appl Phys Lett 83(19):4032–4034. doi: 10.1063/1.162578710.1063/1.1625787 ↗
24. Sun MH, Zhang QF, Wu JL (2007) Electrical and electroluminescence properties of As-doped p-type ZnO nanorod arrays. J Phys D Appl Phys 40(12):3798–3802. doi: 10.1088/0022-3727/40/12/03610.1088/0022-3727/40/12/036 ↗
25. Tang ZK, Kawasaki M, Ohtomo A, Koinuma H, Segawa Y (2006) Self-assembled ZnO nano-crystals and exciton lasing at room temperature. J Cryst Growth 287(1):169–179. doi: 10.1016/j.jcrysgro.2005.10.06210.1016/j.jcrysgro.2005.10.062 ↗
26. Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu SF, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M (2005) Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat Mater 4(1):42–45. doi: 10.1038/nmat128410.1038/nmat1284 ↗