The effect of deposition time on the structural and optical properties of β-Ga2O3 nanowires grown using CVD technique
Source abstract
Abstract
In the present work, we have investigated the effect of deposition time on the morphological, structural, and photoluminescence (PL) properties of β-Ga2O3 NWs grown by CVD technique. The diameter and length of the as-grown NWs varied for the deposition time of 1–4 h, from 50 to 100 nm and 5–15 μm, respectively. The crystalline quality of the NWs improved with increasing the deposition time. The detailed transmission electron microscopy (TEM) and fast Fourier Transformation (FFT) measurements revealed that the as-grown β-Ga2O3 NWs were single crystalline. Furthermore, we have studied the variation of PL spectra of the NWs with deposition time and provided an energy band diagram to give a plausible explanation of the origin of different emissions in the PL spectra. The PL spectra showed a broad strong UV-blue emission band and a weak red emission for 1 h deposited sample. We suggested that the UV and red emission from β-Ga2O3 NWs are related to oxygen vacancies and impurities such as nitrogen, respectively. It was observed that the intensity of UV emission decreased with deposition time and this reduction was attributed primarily to the reduction of oxygen vacancies in the NWs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. Binet L, Gourier D (1998) Origin of the blue luminescence of β-Ga2O3. J Phys Chem Solids 59:1241–124910.1016/S0022-3697(98)00047-X ↗
2. Blasse G, Bril A (1970) Some observations on luminescence of β-Ga2O3. J Phys Chem Solids 31:707–71110.1016/0022-3697(70)90204-0 ↗
3. Chang K-W, Wu J–J (2004a) Low-temperature growth well-aligned β-Ga2O3 nanowires from a single-source organometallic precursor. Adv Mater 16(6):545–54910.1002/adma.200306299 ↗
4. Chang K-W, Wu J–J (2004b) Low-temperature catalytic growth of β-Ga2O3 nanowires using single organometallic precursor. J Phys Chem B 108(6):1838–184310.1021/jp035630c ↗
5. Edwards DD, Mason TO, Goutenoir F, Poeppelmeier KR (1997) A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 system. Appl Phys Lett 70:1706–170810.1063/1.118676 ↗
6. Harwig T, Kellendonk F (1978) Some observations on photoluminescence of doped beta-gallium sesquioxide. J Solid State Chem 24:255–26310.1016/0022-4596(78)90017-8 ↗
7. Harwig T, Kellendonk F, Slappendel S (1978) Ultraviolet luminescence of beta-gallium sesquioxide. J Phys Chem Solids 39(6):675–68010.1016/0022-3697(78)90183-X ↗
8. Hu JQ, Li Q, Meng XM, Lee CS, Lee ST (2002) Synthesis of β-Ga2O3 nanowires by laser ablation. J Phys Chem B 106:9536–953910.1021/jp020734t ↗
9. Jangir R, Porwal S, Tiwari P, Mondal P, Rai SK, Ganguli T, Oak SM, Deb SK (2012) Photoluminescence study of β-Ga2O3 nanostructures annealed in different environments. J Appl Phys 112:034307–1–034307-610.1063/1.4742048 ↗
10. Johnson MC, Aloni S, McCready DE, Bourret-Courchesne ED (2006) Controlled vapor–liquid–solid growth of indium, gallium, and tin oxide nanowires via chemical vapor transport. Cryst Growth Des 6(8):1936–194110.1021/cg050524g ↗
11. Kumar S, Singh R (2013) Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices. Phys Status Solidi RRL 7:781–79210.1002/pssr.201307253 ↗
12. Kumar S, Tessarek C, Christiansen S, Singh R (2014) A comparative study of β-Ga2O3 nanowires grown on different substrates using CVD technique. J Alloys Compd 587:812–818. doi: 10.1016/j.jallcom.2013.10.16510.1016/j.jallcom.2013.10.165 ↗
13. Lee YH, Choi YC, Kim WS, Park YS, Lee SM, Bae DJ (2000) Catalytic growth of β-Ga2O3 nanowires by arc discharge. Adv Mater 12:746–75010.1002/(SICI)1521-4095(200005)12:10<746::AID-ADMA746>3.0.CO;2-N ↗
14. Liang CH, Meng GW, Wang GZ, Wang YW, Zhang LD (2001) Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires. Appl Phys Lett 78:3202–320410.1063/1.1374498 ↗
15. Lorenz MR, Woods JF, Gambino RJ (1967) Some electrical properties of the semiconductor β-Ga2O3. J Phys Chem Solids 28:403–40410.1016/0022-3697(67)90305-8 ↗
16. Ogita M, Saika N, Nakanishi Y, Hatanaka Y (1999) Ga2O3 thin films for high-temperature gas sensors. Appl Surf Sci 142:188–19110.1016/S0169-4332(98)00714-4 ↗
17. Shi F, Xue C (2011) Influence of reaction time on growth of GaN nanowires fabricated by CVD method. J Mater Sci 22:1835–1840
18. Sinha G, Dutta A, Panda SK, Chavan PG, More MA, Joag DS, Patra A (2009) Self-catalytic growth and field-emission properties of Ga2O3 nanowires. J Phys D Appl Phys 42:185409–18541510.1088/0022-3727/42/18/185409 ↗
19. Song YP, Zhang HZ, Lin C, Zhu YW, Li GH, Yang FH, Yu DP (2004) Luminescence emission originating from nitrogen doping of β-Ga2O3 nanowires. Phys Rev B 69:075304–07531110.1103/PhysRevB.69.075304 ↗
20. Tippins HH (1965) Optical absorption and photoconductivity in the band edge of β-Ga2O3. Phys Rev 140:A316–A31910.1103/PhysRev.140.A316 ↗
21. Vanithakumari SC, Nanda KK (2009) A one-step method for the growth of Ga2O3-nanorod-based white-light-emitting phosphors. Adv Mater 21:3581–358410.1002/adma.200900072 ↗
22. Villora EG, Yamaga M, Inoue T, Yabasi S, Mausi Y, Sugawara T, Fukuda T (2002) Optical spectroscopy study on β-Ga2O3. Jpn J Appl Phys 41:L622–L62510.1143/JJAP.41.L622 ↗
23. Wacaser BA, Dick KA, Johansson J, Borgstrom MT, Deppert K, Samuelson L (2009) Preferential interface nucleation: an expansion of the VLS growth mechanism for nanowires. Adv Mater 21:153–16510.1002/adma.200800440 ↗
24. Wagner RS, Ellis WC (1964) Vapor–liquid–solid mechanism of single crystal growth. Appl Phys Lett 4:89–9010.1063/1.1753975 ↗
25. Wang GH, Brewer JR, Chan JY, Diercks D, Cheung CL (2009) Morphological evolution of neodymium boride nanostructure growth by chemical vapor deposition. J Phys Chem C 113:10446–1045110.1021/jp901717h ↗
26. Wang GH, Luo G, Soo YL, Sabirianov RF, Lin HJ, Mei WN, Namavar F, Cheung CL (2011) Phase stabilization in nitrogen-implanted nanocrystalline cubic zirconia. Phys Chem Chem Phys 13:19517–1952510.1039/c1cp22132a ↗
27. Zhang J, Zhang L (2003) Growth of semiconductor gallium nitride nanowires. J Vac Sci Technol B 25:2415–241910.1116/1.1625968 ↗
28. Zhang HZ, Kong YC, Wang YZ, Due X, Bai ZG, Wang J–J, Yu DP, Ding Y, Hang QL, Feng SQ (1999) Ga2O3 nanowires prepared by physical evaporation. Solid State Comm 109:677–68210.1016/S0038-1098(99)00015-0 ↗
29. Zhou XT, Heigl F, Ko JYP, Murphy MW, Zhou JG, Regier T, Blyth RIR, Sham TK (2007) Origin of luminescence from Ga2O3 nanostructures studied using x-ray absorption and luminescence spectroscopy. Phys Rev B 75:125303–12530810.1103/PhysRevB.75.125303 ↗
30. Zhu F, Yang ZX, Zhou WM, Zhang YF (2006) Direct synthesis of beta gallium oxide nanowires, nanobelts, nanosheets and nano-grasses by microwave plasma. Solid State Comm 137:177–18110.1016/j.ssc.2005.11.026 ↗