HfO2-based thin films and devices
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Abstract
202602 bcch
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
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References (12)
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1. The fundamentals and applications of ferroelectric HfO210.1038/s41578-022-00431-2 ↗
2. Ferroelectric hafnium oxide: a potential game-changer for nanoelectronic devices and systems10.1002/aelm.202400686 ↗
3. NVDRAM: a 32Gb dual layer 3D stacked non-volatile ferroelectric memory with near-DRAM performance for demanding AI workloads
4. Direct observation of phase transition in Hf0.5Zr0.5O2 thin films affected by top electrodes using in-situ STEM heating10.1016/j.jmat.2025.101075 ↗
5. Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes10.1016/j.jmat.2025.101015 ↗
6. Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O210.1016/j.jmat.2025.101110 ↗
7. Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes10.1016/j.jmat.2025.101109 ↗
8. Enhanced polarization and reliability of hafnia-based ferroelectrics with 0.1 nm AlOx insertion layer
9. Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films10.1016/j.jmat.2025.101101 ↗
10. Reduced coercive field and enhanced ferroelectric polarization of Hf0.5Zr0.5O2 film through electric-field-assisted rapid annealing10.1016/j.jmat.2025.101061 ↗
11. No-heating deposition of ferroelectric epitaxial Hf0.5Zr0.5O2 films using a sputtering method with precise RF power density and thickness control10.1016/j.jmat.2025.101129 ↗
12. Engineering phase transition and ferroelectric properties in acceptor-doped HfO2/SrRuO3 thin-film heterostructures by a charge-balance synergistic strategy10.1016/j.jmat.2025.101122 ↗