Artificial synaptic simulating pain-perceptual nociceptor and brain-inspired computing based on Au/Bi3.2La0.8Ti3O12/ITO memristor
Source abstract
Abstract
Recently, memristors have garnered widespread attention as neuromorphic devices that can simulate synaptic behavior, holding promise for future commercial applications in neuromorphic computing. In this paper, we present a memristor with an Au/Bi3.2La0.8Ti3O12 (BLTO)/ITO structure, demonstrating a switching ratio of nearly 103 over a duration of 104 seconds. It successfully simulates a range of synaptic behaviors, including long-term potentiation and depression, paired-pulse facilitation, spike-timing-dependent plasticity, spike-rate-dependent plasticity etc. Interestingly, we also employ it to simulate pain threshold, sensitization, and desensitization behaviors of pain-perceptual nociceptor (PPN). Lastly, by introducing memristor differential pairs (1T1R-1T1R), we train a neural network, effectively simplifying the learning process, reducing training time, and achieving a handwriting digit recognition accuracy of up to 97.19%. Overall, the proposed device holds immense potential in the field of neuromorphic computing, offering possibilities for the next generation of high-performance neuromorphic computing chips.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (59)
Show source-provided references
1. Ferroelectric polymers for neuromorphic computing10.1063/5.0073085 ↗
2. Current status and prospects of memristors based on novel 2D materials10.1039/C9MH02033K ↗
3. Reconfigurable 2D-ferroelectric platform for neuromorphic computing10.1063/5.0131838 ↗
4. Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing
5. Power-efficient neural network with artificial dendrites10.1038/s41565-020-0722-5 ↗
6. Memory devices and applications for in-memory computing10.1038/s41565-020-0655-z ↗
7. All-ferroelectric implementation of reservoir computing10.1038/s41467-023-39371-y ↗
8. Bio-inspired 3D artificial neuromorphic circuits
9. Effect of growth temperature on self-rectifying BaTiO3/ZnO heterojunction for high-density crossbar arrays and neuromorphic computing10.1016/j.jcis.2023.08.105 ↗
10. Flexible In–Ga–Zn–N–O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain–computer interfaces10.1039/D3MH00759F ↗
11. Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing10.1038/s41467-023-43944-2 ↗
12. Improvement of nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with an upper Bi4Ti3O12 buffer layer10.1007/s10971-016-4175-0 ↗
13. Effect of La doping on structural and electrical properties of Bi2Ti2O7 thin films10.1016/j.jcrysgro.2004.05.103 ↗
14. Study of the ferroelectricity in Bi2Ti2O7 by infrared spectroscopic ellipsometry10.1063/1.1875755 ↗
15. Improved ferroelectric and fatigue properties in Zr doped Bi4Ti3O12 thin films10.1016/j.matlet.2014.07.182 ↗
16. Morphology and ferroelectric properties of Ce-substituted Bi4Ti3O12 thin films prepared by sol-gel method10.1515/secm-2013-0312 ↗
17. A controllable photoresponse and photovoltaic performance in Bi4Ti3O12 ferroelectric thin films10.1016/j.jallcom.2016.10.160 ↗
18. Excellent bipolar resistive switching characteristics of Bi4Ti3O12 thin films prepared via sol-gel process10.3390/nano11102705 ↗
19. Effect of La doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by sol-gel method10.1007/s11595-007-5622-0 ↗
20. Switching properties of Nd- and La-doped Bi4Ti3O12 thin films under applied stress10.1103/PhysRevB.72.212103 ↗
21. Structure and properties of lanthanide doped Bi4Ti3O12 films10.1080/00150190500311292 ↗
22. An efficient MSM UV photodetector with an ultra-low dark current enhanced by a back to back TiO2/PbTiO3 PN heterojunction
23. Analog synaptic behavior of a silicon nitride memristor10.1021/acsami.7b11191 ↗
24. Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing10.1016/j.matdes.2022.111046 ↗
25. Artificial synapse based on vertically aligned nanocomposite ferroelectric thin films10.1109/LED.2023.3237619 ↗
26. Thousands of conductance levels in memristors integrated on CMOS10.1038/s41586-023-05759-5 ↗
27. Flexible ZnO nanosheet-based artificial synapses prepared by low-temperature process for high recognition accuracy neuromorphic computing10.1002/adfm.202209907 ↗
28. Simplified theory of space-charge-limited currents in an insulator with traps10.1103/PhysRev.103.1648 ↗
29. Application of artificial synapse based on Al-doped SrTiO3 thin film in neuromorphic computing10.1016/j.vacuum.2023.112568 ↗
30. Low-power memristive logic device enabled by controllable oxidation of 2D HfSe2 for in-memory computing
31. 2D MoTe2/MoS2−xOx Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing10.1002/aelm.202300388 ↗
32. An artificial synapse based on Sr(Ti, Co)O3 films
33. Electrically stimulated synaptic resistive switch in solution-processed silicon nanocrystal thin film: formation mechanism of oxygen vacancy filament for synaptic function10.1021/acsaelm.9b00625 ↗
34. Key laboratory of advanced optoelectronic quantum architecture and measurement (MOE), School of Physics, Beijing institute of technology, Beijing 100081, China. Research progress of neuromorphic devices based on two-dimensional layered materials
35. Quantum imaging of the reconfigurable VO2 synaptic electronics for neuromorphic computing10.1126/sciadv.adg9376 ↗
36. Synaptic behaviors in flexible Au/WOx/Pt/mica memristor for neuromorphic computing system10.1016/j.mtphys.2022.100650 ↗
37. Bioinspired artificial visual system based on 2D WSe2 synapse array
38. Monolayer MoS2 synaptic devices synergistically modulated by Na+ ions and sulfur vacancies for neuromorphic computing and pain perception stimulation10.1016/j.jmst.2023.04.025 ↗
39. Negative photoconductance effect: an extension function of the TiOx-based memristor10.1002/advs.202003765 ↗
40. Volatile and nonvolatile memristive devices for neuromorphic computing10.1002/aelm.202101127 ↗
41. Synaptic devices based neuromorphic computing applications in artificial intelligence10.1016/j.mtphys.2021.100393 ↗
42. A robust memristor based on epitaxial vertically aligned nanostructured BaTiO3 −CeO2 films on silicon10.1002/adma.202110343 ↗
43. Synaptic and resistive switching behaviors in NiO/Cu2O heterojunction memristor for bioinspired neuromorphic computing10.1016/j.apsusc.2022.154718 ↗
44. Tuning resistive switching behavior by controlling internal ionic dynamics for biorealistic implementation of synaptic plasticity10.1002/aelm.202101025 ↗
45. Two-terminal lithium-mediated artificial synapses with enhanced weight modulation for feasible hardware neural networks10.1007/s40820-023-01035-3 ↗
46. Reconfigurable memristor based on SrTiO3 thin-film for neuromorphic computing
47. Photonic synapses based on inorganic perovskite quantum dots for neuromorphic computing
48. Filament engineering of two-dimensional h -bn for a self-power mechano-nociceptor system
49. High-performance neuromorphic computing and logic operation based on a self-assembled vertically aligned nanocomposite SrTiO3:MgO film memristor10.1021/acsnano.3c06510 ↗
50. An artificial synapse based on La:BiFeO3 ferroelectric memristor for pain perceptual nociceptor emulation10.1016/j.mtnano.2023.100343 ↗
51. Bio-inspired flexible artificial synapses for pain perception and nerve injuries10.1038/s41528-020-0066-0 ↗
52. Artificial synapses that exploit ionic modulation for perception and integration10.1016/j.mtphys.2020.100329 ↗
53. Mimicking pain-perceptual sensitization and pattern recognition based on capacitance- and conductance-regulated neuroplasticity in neural network10.1021/acsami.2c20297 ↗
54. Edge learning using a fully integrated neuro-inspired memristor chip10.1126/science.ade3483 ↗
55. Mitigating effects of non-ideal synaptic device characteristics for on-chip learning
56. Hardware-friendly stochastic and adaptive learning in memristor convolutional neural networks10.1002/aisy.202100041 ↗
57. Synaptic learning behavior and neuromorphic computing of Au/MXene/NiO/FTO artificial synapse10.1063/5.0167497 ↗
58. Neurosynaptic-like behavior of Ce-doped BaTiO3 ferroelectric thin film diodes for visual recognition applications10.1063/5.0120159 ↗
59. Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing10.1039/D3MH00645J ↗