journal article·2024-07Open access

Optimization of the average figure-of-merit zT in medium-entropy GeTe-based materials via entropy engineering

Xusheng Liu, Keli Wang, Peng Li, Qiqi Tang, Zhenlong Huang, Yuan Lin, Wu Wang, Binbin Jiang, Jiaqing He

Journal of Materiomics· Volume 10· Issue 4

Abstract

Entropy engineering has emerged as an effective strategy for improving the figure-of-merit zT by decelerating the phonon transport while maintaining good electrical transport properties of thermoelectric materials. Herein, a high average zT of 1.54 and a maximum zT of 2.1 are achieved in the mid-entropy GeTe constructed by Ag, Sb, and Pb alloying. At room temperature, the mid-entropy GeTe tends to a cubic structure. And the power factor is improved from 7.7 μW·cm−1·K−2 to 16.2 μW·cm−1·K−2 due to the large increase in effective mass and the optimized carrier concentration. The increasing disorder created by heavy and off-centering Ag, Sb, and Pb atoms induces strong mass/strain fluctuations and phonon scattering to decelerate the phonon transport in GeTe. A low lattice thermal conductivity is obtained in the medium-entropy GeTe-based material. Moreover, a GeTe-based thermoelectric cooler is fabricated with the cooling temperature difference of 66.6 K with the hot end fixed at 363 K. This work reveals the effectiveness of entropy engineering in improving the average zT in GeTe and shows potential application of GeTe as a thermoelectric cooler.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (60)

Show source-provided references
1. Advances in thermoelectric materials research: looking back and moving forward10.1126/science.aak9997 ↗
2. Resonant level-induced high thermoelectric response in indium-doped GeTe10.1038/am.2016.203 ↗
3. Recent progress and future challenges on thermoelectric Zintl materials10.1016/j.mtphys.2017.06.003 ↗
4. Room-temperature thermoelectric materials: challenges and a new paradigm10.1016/j.jmat.2021.07.004 ↗
5. High efficiency GeTe-based materials and modules for thermoelectric power generation10.1039/D0EE02791J ↗
6. Thermoelectric devices: a review of devices, architectures, and contact optimization
7. Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values10.1038/s41467-023-43228-9 ↗
8. Evolution of defect structures leading to high zT in GeTe-based thermoelectric materials10.1038/s41467-022-33774-z ↗
9. Oxide semiconductors for thermoelectric: the challenges and future10.1111/jace.19464 ↗
10. Recent development of thermoelectric nanofibers and their composites10.1016/j.jmat.2022.08.009 ↗
11. Highly tailored gap-like structure for excellent thermoelectric performance10.1039/D2EE02336A ↗
12. Figure of merit zT of a thermoelectric device defined from materials properties10.1039/C7EE02007D ↗
13. Achieving a high average zT value in Sb2Te3-based segmented thermoelectric materials10.1021/acsami.9b19798 ↗
14. Tunable quantum gaps to decouple carrier and phonon transport leading to high-performance thermoelectrics10.1038/s41467-022-33330-9 ↗
15. Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance10.1039/C9EE00317G ↗
16. Band engineering of thermoelectric materials10.1002/adma.201202919 ↗
17. Germanium chalcogenide thermoelectrics: electronic structure modulation and low lattice thermal conductivity10.1021/acs.chemmater.8b02676 ↗
18. Simultaneous optimization of carrier concentration and alloy scattering for ultrahigh performance GeTe thermoelectrics10.1002/advs.201700341 ↗
19. Stabilizing the optimal carrier concentration in Al/Sb-codoped GeTe for high thermoelectric performance10.1021/acsami.1c12282 ↗
20. High-performance GeTe thermoelectrics in both rhombohedral and cubic phases10.1021/jacs.8b09147 ↗
21. Achieving high carrier mobility and thermal stability in plainified rhombohedral GeTe thermoelectric materials with zT > 2
22. Manipulating the Ge vacancies and Ge precipitates through Cr doping for realizing the high-performance GeTe thermoelectric material10.1002/smll.201906921 ↗
23. Vacancy manipulation for thermoelectric enhancements in GeTe alloys10.1021/jacs.8b09375 ↗
24. Bi-Zn codoping in GeTe synergistically enhances band convergence and phonon scattering for high thermoelectric performance10.1039/D0TA08700A ↗
25. Origin of the high performance in GeTe-based thermoelectric materials upon Bi2Te3 doping10.1021/ja504896a ↗
26. Probing of Bi doped GeTe thermoelectrics leads to revelation of resonant states10.1016/j.jallcom.2022.165965 ↗
27. Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature zT in tin telluride10.1039/C9TC01184F ↗
28. Discordant nature of Cd in GeTe enhances phonon scattering and improves band convergence for high thermoelectric performance10.1039/C9TA10436D ↗
29. Stacking faults modulation for scattering optimization in GeTe-based thermoelectric materials10.1016/j.nanoen.2019.104347 ↗
30. High thermoelectric performance achieved in GeTe-Bi2Te3 pseudo-binary via van der waals gap-induced hierarchical ferroelectric domain structure
31. Near-room-temperature rhombohedral Ge1–xPbxTe thermoelectrics
32. Phase-transition temperature suppression to achieve cubic GeTe and high thermoelectric performance by Bi and Mn codoping10.1073/pnas.1802020115 ↗
33. Strong phonon-phonon interactions securing extraordinary thermoelectric Ge1–xSbxTe with Zn-alloying-induced band alignment10.1021/jacs.8b12624 ↗
34. Band engineering and thermoelectric performance optimization of p-type GeTe-based alloys through Ti/Sb co-doping10.1021/acs.jpcc.0c00045 ↗
35. Ultralow lattice thermal conductivity and superhigh thermoelectric figure-of-merit in (Mg, Bi) co-doped GeTe10.1002/adma.202008773 ↗
36. Resonance levels in GeTe thermoelectrics: zinc as a new multifaceted dopant10.1039/D0NJ04273K ↗
37. Mg/Ca doping ameliorates the thermoelectric properties of GeTe: influence of electronic structure engineering10.1016/j.jallcom.2020.155989 ↗
38. High performance thermoelectric materials and devices based on GeTe10.1039/C6TC02501C ↗
39. Entropy engineering enhances the thermoelectric performance and microhardness of (GeTe)1–x(AgSb0.5Bi0.5Te2)x10.1007/s40843-022-2211-8 ↗
40. Realizing high-efficiency power generation in low-cost PbS-based thermoelectric materials10.1039/C9EE03410B ↗
41. Entropy engineering promotes thermoelectric performance in p-type chalcogenides10.1038/s41467-021-23569-z ↗
42. High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics10.1126/science.abq5815 ↗
43. High-entropy stabilized thermoelectric materials10.1016/j.scib.2023.05.026 ↗
44. High thermoelectric performance in entropy-driven Ge1–2x–yPbxSnxSbyTe10.1039/D2TA09075A ↗
45. Towards a new chalcopyrite high-performance thermoelectric semiconductor Cu3InSnSe5 by entropy engineering10.1016/j.actamat.2023.119259 ↗
46. (GeTe)1–x(AgSnSe2)x: strong atomic disorder-induced high thermoelectric performance near the Ioffe-regel limit10.1021/acsami.1c14801 ↗
47. All cubic-phase δ-TAGS thermoelectrics over the entire mid-temperature range
48. Compressive creep behavior of hot-pressed GeTe based TAGS-85 and effect of creep on thermoelectric properties10.1016/j.actamat.2018.07.050 ↗
49. Enhancing near-room-temperature GeTe thermoelectrics through In/Pb co-doping
50. CP2K: atomistic simulations of condensed matter systems10.1002/wcms.1159 ↗
51. CP2K: an electronic structure and molecular dynamics software package-Quickstep: efficient and accurate electronic structure calculations
52. Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases
53. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
54. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
55. A tool for the analysis of quasi-Newton methods with application to unconstrained minimization10.1137/0726042 ↗
56. Superior performance and high service stability for GeTe-based thermoelectric compounds10.1093/nsr/nwz052 ↗
57. All-inorganic halide perovskites as potential thermoelectric materials: dynamic cation off-centering induces ultralow thermal conductivity10.1021/jacs.0c03427 ↗
58. Emphanisis in cubic (SnSe) 0.5(AgSbSe2)0.5: dynamical off-centering of anion leads to low thermal conductivity and high thermoelectric performance10.1021/jacs.1c08931 ↗
59. Realization of high thermoelectric figure of merit in GeTe by complementary co-doping of Bi and in10.1016/j.joule.2019.08.017 ↗
60. Low thermal conductivity and high thermoelectric performance in Sb and Bi codoped gete: complementary effect of band convergence and nanostructuring10.1021/acs.chemmater.7b04023 ↗