Effects of Sintering Temperature on MoOx Target and Film
Source abstract
Abstract
The sintering process of the MoOx target has an impact on the quality of the sputtered film. In this study, powders of MoO3 (78 wt%) and MoO2 (22 wt%) were milled and hot-pressed to prepare the MoOx target. The effects of the sintering temperature of the MoOx targets on the properties of the sputtered MoOx films were investigated by X-ray diffraction, scanning electron microscopy, four-probe needle, and spectrophotometer tests. The research results revealed that the MoOx target at the sintered temperature of 1000 °C had a clear crystal structure and dense grains, exhibiting good sinterability, crystallization behavior, and film-forming property. The sputtered film deposited by the MoOx target could obtain high quality with a smooth interface and uniform thickness. The film had smaller resistivity, higher reflectivity, and appropriate transmissivity compared to the ones fabricated by other targets that were sintered at 800 °C, 900 °C, and 1100 °C.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shenzhen APG Material Technology Co., Ltd. (APG), Shenzhen 518000, China
Department of Mechanical and Electronic Engineering, Changsha University, Changsha 410022, China
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Funding
High-tech Industry Technology Innovation Leading Plan of Hunan Province · Natural Science Foundation of Hunan Province China
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