Relationship Processing–Composition–Structure–Resistivity of LaNiO3 Thin Films Grown by Chemical Vapor Deposition Methods
Source abstract
Abstract
Precision control of resistivity/conductivity of LaNiO3 (LNO) films is essential for their integration as electrodes in the functional heterostructures. This becomes possible if the relationship between processing parameters–composition–structure–resistivity is determined. LaNiO3 films were deposited by three different chemical vapor deposition methods using different precursor supply systems: direct liquid delivery, pulsed liquid injection, and aerosol generation. The possibilities to ameliorate the efficiency of precursor evaporation and of film growth were studied. The relationship between deposition conditions and composition was determined. Detailed analysis of the epitaxial growth of LNO films on cubic and trigonal substrates and the influence of the rhombohedral distortion on the microstructural quality was done. The resistivity of LaNiO3 films, grown by chemical vapor deposition, was mainly defined by microstructural defects and La/Ni composition. The high epitaxial quality LaNiO3/LaAlO3 films with nearly stoichiometric La/Ni ratio presented low resistivity, which was very close to that of bulk LaNiO3. Their annealing in oxygen atmosphere had little effect on the resistivity, which suggests a minor presence of oxygen vacancies in the as-grown films.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
FEMTO-ST Institute, University of Bourgogne Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l’Epitaphe, 25030 Besançon, France
Faculty of Chemistry and Geosciences, Vilnius University, Naugarduko 24, 03225 Vilnius, Lithuania
Annealsys, 139 rue des Walkyries, 34000 Montpellier, France
Jean Lamour Institute, CNRS (UMR 7198), Université de Lorraine, 2 allée André Guinier, 54011 Nancy, France
Funding
EUR EIPHI program · RENATECH network · French National Research Agency · SME Annealsys · Bourgogne Franche-Comté region
References (37)
Show source-provided references
1. Ferroelectric La–Sr–Co–O/Pb–Zr–Ti–O/La–Sr–Co–O heterostructures on silicon via template growth10.1063/1.110106 ↗
2. Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition10.1063/1.109612 ↗
3. Growth and characterization of conductive SrRuO3 and LaNiO3 multilayers on textured Ni tapes for high-Jc YBa2Cu3O7−δ coated conductors10.1557/JMR.2001.0365 ↗
4. Neutron-diffraction study of RNiO3 (R = La, Pr, Nd, Sm): Electronically induced structural changes across the metal-insulator transition10.1103/PhysRevB.46.4414 ↗
5. Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode10.1007/s003390000696 ↗
6. Pulsed laser deposition of epitaxial PbZrxTi1−xO3 ferroelectric capacitors with LaNiO3 and SrRuO3 electrodes10.1016/S0169-4332(00)00601-2 ↗
7. Orbital reflectometry of oxide heterostructures10.1038/nmat2958 ↗
8. Epitaxial growth and electrical transport property of artificial LaNiO3/LaAlO3 superlattices10.1016/j.ceramint.2011.05.112 ↗
9. High-quality LaNiO3 thin-film electrode grown by pulsed laser deposition10.1116/1.581664 ↗
10. Microstructures of LaNiO3 films grown on Si(001) by pulsed laser deposition10.1016/S0040-6090(01)01735-7 ↗
11. Preparation of perovskite conductive LaNiO3 films by metalorganic decomposition10.1063/1.115930 ↗
12. Low-temperature epitaxial growth of conductive LaNiO3 thin films by RF magnetron sputtering10.1016/S0040-6090(02)00238-9 ↗
13. The metal–organic chemical vapor deposition of lanthanum nickelate electrodes for use in ferroelectric devices10.1002/cvde.200390007 ↗
14. Epitaxial heterostructures of KNbO3/LaNiO3/SrTiO3 and KNbO3/La1−xKxMnO3/SrTiO3: MOCVD preparation and properties10.1149/1.3207633 ↗
15. Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor10.1039/a606316k ↗
16. Direct observation of Ni3+ and Ni2+ in correlated LaNiO3−δ films10.1209/0295-5075/93/57002 ↗
17. Volatility studies on single source precursors for LaNiO3 film deposition: Mass spectrometry and thermal analysis10.1051/jp4:2001384 ↗
18. Study of optical and electrical properties of nickel oxide (NiO) thin films deposited by using a spray pyrolysis technique10.4236/jmp.2014.518212 ↗
19. Growth of LaNiO3 thin films on MgO by flash MOCVD10.1016/S0022-0248(97)00454-5 ↗
20. Metal-organic chemical vapour deposition of mixed-conducting perovskite oxide layers on monocrystalline and porous ceramic substrates10.1016/S0040-6090(03)01404-4 ↗
21. Thermogravimetric studies of metal β-diketonates10.1016/0022-1902(67)80452-4 ↗
22. Burriel López, M. (2007). Epitaxial Thin Films of Lanthanum Nickel Oxides: Deposition by PI-MOCVD, Structural Characterization and High Temperature Transport Properties. [Ph.D. Thesis, Universitat Autònoma de Barcelona].
23. Ferroelectric PbTiO3 films grown by pulsed liquid injection MOCVD10.1016/j.surfcoat.2007.05.006 ↗
24. Ferroelectric PbTiO3 films grown by pulsed liquid injection metalorganic chemical vapour deposition10.1080/00150190701368059 ↗
25. Properties of In-, Ga-, and Al-doped ZnO films grown by aerosol-assisted MOCVD: Influence of deposition temperature, doping level and annealing10.1016/j.surfcoat.2014.12.052 ↗
26. Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs10.4028/www.scientific.net/MSF.924.939 ↗
27. (2018, September 20). What does DLI mean?. Available online: https://www.annealsys.com/applications/dli-processes/what-does-dli-mean-ty20804.html.
28. Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire10.1016/j.matchemphys.2014.11.018 ↗
29. Pietro, M. (2018). Direct liquid injection chemical vapor deposition. Chemical Vapor Deposition for Nanotechnology, InTech.
30. Metal complexes as color indicators for solvent parameters10.1021/ed062p459 ↗
31. Jones, A.C. (1999, January 10–15). MOCVD of electroceramic oxides: A precursor manufacturer’s perspective. Proceedings of the Twelfth European Conference on Chemical Vapour Deposition, Sitges, Spain.
32. Effect of LiNbO3 polarity on the structural, optical and acoustic properties of epitaxial ZnO and MgxZn1−xO films10.1088/1361-6463/aadcce ↗
33. Teherani, F.H., Look, D.C., and Rogers, D.J. (2013). Effect of deposition conditions on the stoichiometry and structural properties of LiNbO3 thin films deposited by MOCVD. Oxide-based Materials and Devices IV, Proceedings of SPIE OPTO, San Francisco, CA, USA, 2–7 February 2013, SPIE.
34. Toward high-quality epitaxial LiNbO3 and LiTaO3 thin films for acoustic and optical applications10.1002/admi.201600998 ↗
35. Study of some aspects of the reactivity of La2O3 with CO2 and H2O10.1007/BF01026524 ↗
36. Design of higher-k and more stable rare earth oxides as gate dielectrics for advanced CMOS devices10.3390/ma5081413 ↗
37. Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3−δ films on Si substrates10.1016/j.tsf.2010.08.129 ↗