journal article·1989-01

Generation of divacancies in silicon irradiated by 2-MeV electrons: depth and dose dependence

Authors not provided

Vacuum· Volume 39· Issue 5
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Electron and X-Ray Spectroscopy Techniques · Ion-surface interactions and analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.