Preparation and properties of CuInS_2 thin film deposited by single-source thermal evaporation

CuInS2 thin film was deposited on the soda-lime glass substrate by single-source thermal evaporation process,where the CuInS2 powder as starting material was synthesized via vacuum sintering.With the increasing annealing temperature,the crystallinity of the film was improved with high(112) preferred orientation.The film annealed at 350℃ became compact with fine grain size down to dozens of nanometers.Moreover,the test result by thermal probe showed the weak N-type conductivity of the film.As to its optical property,the forbidden band width of the CuInS2 thin film annealed at higher than 250℃ is 1.50eV,ie.,approximates to the ideal forbidden band width which is necessary to absorb solar spectrum.