Formation and desorption of SiI2 molecules

Abstract The chemical etching of Si(100)−(2×1) in I2 ambient is considered. The desorption activation energy of SiI2 molecules is evaluated from experimental data. It is found that the desorption activation energy of SiI2 molecules is equal to E d = ( 1.95 ± 0.02 ) eV . This corresponds to a value of the mean lifetime of adsorbed molecules on the surface of τ = ( 380 ± 150 ) s at temperature T = 650 K .