article·2016-08-03Open access

Enhanced Sb2S3 crystallisation by electric field induced silver doping

Weiling Dong, Miloš Krbal, Janne Kalikka, Xin Yu Chin, Behrad Gholipour, Cesare Soci, Paul Fons, Kirill V. Mitrofanov, Lujie Chen, Robert E. Simpson

Abstract

Abstract This work reveals that doping Ag into Sb 2 S 3 substantially decreases its crystallisation temperature. We show that applying an electric field to Sb 2 S 3 through Ag electrodes provides control of the crystallisation temperature and crystallisation rate. The crystal nuclei incubation time decreases substantially when the applied electric field is set to 200 kV/m. The applied electric field appears to force the Ag cations through the amorphous chalcogenide film resulting in Ag doped Sb 2 S 3 filaments that extend from the cathode to the anode. This was confirmed by X-ray fluorescence composition mapping. Density functional theory molecular dynamics modelling of Ag doped Sb 2 S 3 reveals that the diffusion constant of Ag is twice that of Sb or S over a wide temperature range, which implies that the Ag atoms are mobile in the amorphous Sb 2 S 3 structure. The applied electric field provides a mechanism to enhance the crystallisation kinetics of Ag-doped Sb 2 S 3 .
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography

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