Enhanced Sb2S3 crystallisation by electric field induced silver doping
Source abstract
Abstract
Abstract This work reveals that doping Ag into Sb 2 S 3 substantially decreases its crystallisation temperature. We show that applying an electric field to Sb 2 S 3 through Ag electrodes provides control of the crystallisation temperature and crystallisation rate. The crystal nuclei incubation time decreases substantially when the applied electric field is set to 200 kV/m. The applied electric field appears to force the Ag cations through the amorphous chalcogenide film resulting in Ag doped Sb 2 S 3 filaments that extend from the cathode to the anode. This was confirmed by X-ray fluorescence composition mapping. Density functional theory molecular dynamics modelling of Ag doped Sb 2 S 3 reveals that the diffusion constant of Ag is twice that of Sb or S over a wide temperature range, which implies that the Ag atoms are mobile in the amorphous Sb 2 S 3 structure. The applied electric field provides a mechanism to enhance the crystallisation kinetics of Ag-doped Sb 2 S 3 .
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
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