Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge

A noble method for the production of high density and low electron temperature plasma is presented. In plasma enhanced chemical vapor depositions, electron temperature affects the quality of deposited films, so a low-electron-temperature plasma is required to reduce excess dissociated radicals. Here, a grid-biasing method is modified and improved to produce high-electron-density and low-electron-temperature plasmas to increase deposition speed. As a result, the electron temperature is lowered in a range of 0.1-0.5 eV and the electron density is raised from the order of 10 9 to ∼2 × 10 11 cm -3 .