Radio frequency source power effect on silicon nitride films deposited by a room-temperature pulsed-PECVD

Abstract Silicon nitride (SiN) films deposited by using a pulsed-plasma enhanced chemical vapor deposition system at room temperature were investigated as a function of radio frequency source power and duty ratio in the experimental ranges of 200–800 W and 40–90%, respectively. Diagnostic parameters, measured using a non-invasive ion energy analyzer, were related to SiN deposition rate. Decreasing the source power increased high ion energy, but decreased low ion energy. A high similarity between ion energy flux and ion energy was observed. Decreasing the source power increased the deposition rate for all duty ratios. For all the variations in the power and duty ratio, the deposition rate varied in the range of 290–640 A/min. Decreasing the duty ratio was effective in increasing the deposition rate. The deposition rate was strongly correlated to high ion energy and high ion energy flux as a function of source power.