Microstructure and thermoelectric properties of Heusler Fe2VAl thin-films

Abstract Heusler-type Fe 2 VAl thin-films were prepared on zirconia substrate by radio-frequency magnetron sputtering. The effect of deposition temperature on crystal structure and electrical properties was investigated. The degree of Heusler-type ordering in crystal structure was enhanced by the increase in deposition temperature. The enhanced Heusler-type ordering contributed to the formation of a steep density of state derived from pseudogap opening near Fermi level, resulting in large Seebeck coefficient. Since the film consisted of submicrometer-size grains, the electrical conductivity and the thermal conductivity of the film were both reduced by the grain boundary effect. The estimated thermoelectric power factor was 1.0 mW/mK 2 at 350 K.