Influence of sputtering conditions on the properties of aluminum-doped zinc oxide thin film fabricated using a facing target sputtering system

Abstract In this study, aluminum-doped zinc oxide thin films are deposited on a glass substrate using a facing target sputtering system, as a function of film thickness and input power, to study their crystallographic, optical, and electrical properties at various sputtering conditions. X-ray crystallography results revealed a (002) peak at approximately 34° with the highest intensity. The 200 nm film deposited at 100 W exhibited high crystallinity, the highest transmittance (92%), and lowest resistivity (1.4 × 10−3 Ω cm).