Structural, electrical and moisture resistance properties of Ga-doped ZnO films

Abstract The structural, electrical and moisture resistance properties of Ga-doped ZnO (GZO) films with 200 nm thickness in terms of their dependence on oxygen gas flow rate ( f O 2 ) during deposition were studied. GZO films are deposited on glass substrates by ion plating with DC arc discharge. After a reliability test at a temperature of 60 °C and a relative humidity of 95% for 500 h, the percentage of resistivity change of GZO films decreased from 16–20% to 3–11% with increasing f O 2 from 6–12 to 14–25 sccm. The minimum percentage of the resistivity change was observed in the GZO films deposited at f O 2 of 21 sccm and the resistivity after the reliability test was 3.5 × 10 − 4 Ω cm. The effects of the intrinsic defects on the percentage of resistivity change are discussed on the basis of electrical and optical characteristics of GZO films.