Enhanced carrier collection in p-Ni1−xO:Li/n-Si heterojunction solar cells using LiF/Al electrodes
Source abstract
Abstract
Abstract This study confirms that a LiF/Al (LiF thickness = 15 A) stack is an efficient Ohmic contact method for use in p-Ni1 − xO:Li/n-Si heterojunction solar cell applications. The maximal conversion efficiency obtained was 6.31%, which was 2.1% greater compared with that of Al-only electrode cell. Temperature-dependent current–voltage measurements confirmed that the carrier transport mechanism was dipole-assisted tunneling at the interface. The insertion of LiF acted as an effective Ohmic contact method and also assisted the back surface passivation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Semiconductor materials and devices
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