SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure

SnS thin films were grown by sulfurization of Sn layers evaporated by electron beam. The effect of sulfurization parameters, such as temperature and pressure, on the properties of tin sulfide layers has been investigated. Ar pressure used during the sulfurization has a strong impact on the development of a proper SnS/Mo back interface. However, the sulfurization temperature is the parameter that regulates the formation of an orthorhombic single phase SnS thin film with the optimum properties to be used as absorber for solar cell devices. Sulfurization temperature of 220 °C for 240 min led to the formation of single phase tin sulfide layers. Direct band gap energy about 1.2 eV has been determined