article·2004-06-02

Raman spectra for β-FeSi2 bulk crystals

Yoshihito Maeda, Haruhiko Udono, Yoshikazu Terai

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Abstract

Complete determination of all Raman active lines in the range between 180 and 480 cm−1 for an orthorhombic β-FeSi2 lattice has been performed by accurate polarized Raman measurements on β-FeSi2 and a crystal rotation method along the 〈111〉 axis. The 20 Raman active lines including 7 new lines in the range between 180 and 480 cm−1 were observed. Further polarization relations for each observed Raman lines were analyzed from their intensity changes as a function of crystal rotation angle. The components of the Raman tensor of β-FeSi2 were discerned from the polarization curves.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Silicon and Solar Cell Technologies

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