Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer

This study revolved around the introduction of a crystallization technology for amorphous silicon film using Joule-heating. As part of this study, an electric field was applied to a conductive layer to induce Joule-heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule-heating through a solid state transformation under typical processing conditions. Uniformly distributed fine grains were obtained due to enormously high heating rate of this process. Crystallization was accomplished throughout the sample within the range of milliseconds of the heating, thus demonstrating the possibility of a crystallization route for amorphous silicon films at room temperature.